MMBT4140 Datasheet. Equivalente

 ..1. Size:1839K  eicsemi
 mmbt4140.pdf

TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com MMBT4140 NPN Silicon General Purpose Transistor SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current (DC) IC 1 A Peak Collector Current ICM 2 A Peak Base Current

 8.1. Size:95K  fairchild semi
 2n4124 mmbt4124.pdf

2N4124 MMBT4124 C E TO-92 C B B SOT-23 E Mark ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Vo

 8.2. Size:81K  fairchild semi
 2n4126 mmbt4126.pdf

2N4126 MMBT4126 C E C TO-92 B B SOT-23 E Mark ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch- ing applications at collector currents to 10 A as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base

 8.3. Size:339K  diodes
 mmbt4126.pdf

MMBT4126 25V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Ideal for Medium Power Amplification and Switching Case Material Molded plastic, Green Molding Compound; Complementary NPN Type MMBT4124 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 &

 8.4. Size:324K  diodes
 mmbt4124.pdf

MMBT4124 25V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 25V Case SOT23 IC = 200mA High Collector Current Case Material Molded Plastic, Green Molding Compound; Complementary PNP Type MMBT4126 UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity Level 1 per J

 8.5. Size:154K  onsemi
 mmbt4126lt1.pdf

MMBT4126LT1G General Purpose Transistor PNP Silicon Features http //onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model > 4000 V - Machine Model > 400 V COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-Emitter Voltage VCEO -25 Vdc Collector-Ba

 8.6. Size:183K  onsemi
 mmbt4126lt1g.pdf

MMBT4126LT1G General Purpose Transistor PNP Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model > 4000 V - Machine Model > 400 V COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-Emitter Voltage VCEO -25 Vdc Collector-Base

 8.7. Size:144K  onsemi
 mmbt4124lt1.pdf

MMBT4124LT1G General Purpose Transistor NPN Silicon Features http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc 2 Emitter-Base Voltage VEBO 5.0 Vdc EMITTER Collector Current - Continuous IC 200 mAdc THER

 8.8. Size:148K  onsemi
 mmbt4124lt1g.pdf

MMBT4124LT1G General Purpose Transistor NPN Silicon Features www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc 2 Emitter-Base Voltage VEBO 5.0 Vdc EMITTER Collector Current - Continuous IC 200 mAdc THERMAL