MMBT4140 Datasheet and Replacement

TH09/2479TH97/2478 IATF 0113686SGS TH07/1033www.eicsemi.comMMBT4140 NPN Silicon General Purpose Transistor SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 30 VEmitter Base Voltage VEBO 5 VCollector Current (DC) IC 1 APeak Collector Current ICM 2 APeak Base Current

2N4124 MMBT4124CETO-92CB BSOT-23EMark: ZCNPN General Purpose AmplifierThis device is designed as a general purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to100 MHz as an amplifier.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base Vo

2N4126 MMBT4126CEC TO-92B BSOT-23EMark: ZFPNP General Purpose AmplifierThis device is designed for general purpose amplifier and switch-ing applications at collector currents to 10 A as a switch and to100 mA as an amplifier.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base

MMBT4126 25V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Ideal for Medium Power Amplification and Switching Case Material: Molded plastic, Green Molding Compound; Complementary NPN Type: MMBT4124 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 &

MMBT4124 25V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 25V Case: SOT23 IC = 200mA High Collector Current Case Material: Molded Plastic, Green Molding Compound; Complementary PNP Type: MMBT4126 UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity: Level 1 per J

MMBT4126LT1GGeneral Purpose TransistorPNP SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating: - Human Body Model: > 4000 V- Machine Model: > 400 V COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value Unit EMITTERCollector-Emitter Voltage VCEO -25 VdcCollector-Ba

MMBT4126LT1GGeneral Purpose TransistorPNP SiliconFeatures Moisture Sensitivity Level: 1 www.onsemi.com ESD Rating: - Human Body Model: > 4000 V- Machine Model: > 400 VCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value Unit EMITTERCollector-Emitter Voltage VCEO -25 VdcCollector-Base

MMBT4124LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 25 VdcCollector-Base Voltage VCBO 30 Vdc2Emitter-Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 200 mAdcTHER

MMBT4124LT1GGeneral Purpose TransistorNPN SiliconFeatureswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 25 VdcCollector-Base Voltage VCBO 30 Vdc2Emitter-Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 200 mAdcTHERMAL