MMBT5088 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT5088LT1/DMMBT5088LT1Low Noise Transistors*MMBT5089LT1COLLECTORNPN Silicon3*Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol 5088LT1 5089LT1 Unit2CollectorEmitter Voltage VCEO 30 25 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 35 30 VdcSOT23 (TO236A

2N5088 MMBT50882N5089 MMBT5089CEC TO-92BBSOT-23EMark: 1Q / 1RNPN General Purpose AmplifierThis device is designed for low noise, high gain, general purposeamplifier applications at collector currents from 1A to 50 mA.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 2N5088 30 V2N5089 25 VVCBO

SMD Type TransistorsNPN TransistorsMMBT5088 (KMBT5088)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=30V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage V

MMBT5088L, MMBT5089LLow Noise TransistorsNPN SiliconFeatures S and NSV Prefix for Automotive and Other Applications Requiringhttp://onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23 (TO-236)CASE 318MAXIMUM RATINGSSTYLE 6Rating Symbol Value Unit

MMBT5088LT1G,MMBT5089LT1GLow Noise TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31MAXIMUM RATINGSBASERating Symbol Value Unit2Collector-Emitter Voltage VCEO VdcEMITTERMMBT5088 30MMBT5089 25Collector-Base Voltage VCBO Vdc3SOT-23 (TO-236)MMBT5088 35MMBT5089 30 CASE 31

MMBT5088L, MMBT5089LLow Noise TransistorsNPN SiliconFeatures S and NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantSOT-23 (TO-236)CASE 318MAXIMUM RATINGSSTYLE 6Rating Symbol Value UnitCOL

MMBT5088LT1G,SMMBT5088LT1G,MMBT5089LT1G,SMMBT5089LT1GLow Noise Transistorshttp://onsemi.comNPN SiliconFeatures AEC-Q101 Qualified and PPAP CapableSOT-23 (TO-236) S Prefix for Automotive and Other Applications Requiring UniqueCASE 318Site and Control Change RequirementsSTYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant

MMBT5088MMBT5089COLLECTORLow Noise NPN Transistor33Surface Mount112BASEP b Lead(Pb)-Free2SOT-23EMITTERMaximum RatingsRating Symbol5088LT1 5089LT1 UnitCollector-Emitter Voltage V 30 25 VdcCE OCollector-B as e Voltage VCB O 35 30 VdcE m itter-B as e Voltage VE B O 4.5 VdcCollector Current-Continuous ICmAdc50Thermal CharacteristicsCharacteristics