MMBT5857
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT5857
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.75
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 1
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 15
MHz
Capacitancia de salida (Cc): 100
pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta:
TO236
Búsqueda de reemplazo de transistor bipolar MMBT5857
MMBT5857
Datasheet (PDF)
8.1. Size:144K onsemi
nsvmmbt589lt1g.pdf 
MMBT589LT1G,NSVMMBT589LT1GHigh Current Surface MountPNP Silicon SwitchingTransistor for Loadhttp://onsemi.comManagement in Portable Applications30 VOLTS, 2.0 AMPSPNP TRANSISTORSFeatures AEC-Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change RequirementsSOT-23 (TO-236) These Devices are P
8.2. Size:164K onsemi
mmbt589lt1g nsvmmbt589lt1g.pdf
MMBT589LT1G,NSVMMBT589LT1GHigh Current Surface MountPNP Silicon SwitchingTransistor for Loadwww.onsemi.comManagement in Portable Applications30 VOLTS, 2.0 AMPSPNP TRANSISTORSFeatures NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BF
8.3. Size:144K onsemi
mmbt589lt1g.pdf
MMBT589LT1G,NSVMMBT589LT1GHigh Current Surface MountPNP Silicon SwitchingTransistor for Loadhttp://onsemi.comManagement in Portable Applications30 VOLTS, 2.0 AMPSPNP TRANSISTORSFeatures AEC-Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change RequirementsSOT-23 (TO-236) These Devices are P
8.4. Size:133K onsemi
mmbt589lt1.pdf
MMBT589LT1GHigh Current Surface MountPNP Silicon SwitchingTransistor for LoadManagement in http://onsemi.comPortable Applications30 VOLTS, 2.0 AMPSFeaturesPNP TRANSISTORS These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGS (TA = 25C)1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -30 VdcCollector-
8.5. Size:283K secos
mmbt589.pdf
MMBT589PNP SiliconElektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeFEATURESSOT-23A2 Dim Min MaxLEmitter3A 2.800 3.0403B 1.200 1.400Top View SB1121 BaseC 0.890 1.1102D 0.370 0.500V GG 1.780 2.040Collector 3H 0.013 0.100CJ 0.085 0.177HJD K K 0.450 0
8.6. Size:1687K jiangsu
mmbt589.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT589 TRANSISTOR (PNP) FEATURES High current surface mount PNP silicon switching transistor for 1. BASE Load management in portable applications 2. EMITTER 3. COLLECTOR MARKING :589 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVC
8.7. Size:875K htsemi
mmbt589.pdf
MMBT58 9TRANSISTOR(PNP)SOT-23 FEATURES High current surface mount PNP silicon switching transistor for Load management in portable applications 1. BASE 2. EMITTER MARKING :589 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5
8.8. Size:228K lge
mmbt589 sot-23.pdf
MMBT589 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features High current surface mount PNP silicon switching transistor for Load management in portable applications MARKING :589 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitte
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