MMBT6076 Todos los transistores

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT6520LT1/D High Voltage Transistor MMBT6520LT1 PNP Silicon Motorola Preferred Device COLLECTOR 3 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Emitter Voltage VCEO 350 Vdc Collector Base Voltage VCBO 350 Vdc Emitter Base Volt

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT6427LT1/D Darlington Transistor MMBT6427LT1 NPN Silicon Motorola Preferred Device COLLECTOR 3 BASE 1 3 EMITTER 2 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 40 Vdc Emitter Base Voltage VEBO 12

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT6428LT1/D Amplifier Transistors MMBT6428LT1 COLLECTOR NPN Silicon MMBT6429LT1 3 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol 6428LT1 6429LT1 Unit 2 Collector Emitter Voltage VCEO 50 45 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 60 55 Vdc SOT 23 (TO 236AB) Emitter Base Voltage VEBO

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT6517LT1/D High Voltage Transistor MMBT6517LT1 NPN Silicon Motorola Preferred Device COLLECTOR 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCEO 350 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 350 Vdc Emitter Base Voltage VE

MPS6515/MMBT6515 NPN General Purpose Amplifier 3 This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a 2 switch and to 100MHz as an amplifier. SOT-23 TO-92 1 Mark 3J 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Valu

MMBT6428 NPN General Purpose Amplifier 3 This device designed for general pupose amplifier applications at collector currents to 300mA Sourced from process 10. 2 SOT-23 1 Mark 1K 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 60 V IC C

2N6427 MMBT6427 C E C TO-92 B B SOT-23 E Mark 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collect

MPS6515/MMBT6515 NPN General Purpose Amplifier 3 This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a 2 switch and to 100MHz as an amplifier. SOT-23 TO-92 1 Mark 3J 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Valu

MMBT6589T1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in http //onsemi.com Portable Applications 30 VOLTS, 2.0 AMPS Features PNP TRANSISTOR Pb-Free Package is Available COLLECTOR 1, 2, 5 MAXIMUM RATINGS (TA = 25 C) 3 Rating Symbol Max Unit BASE Collector-Emitter Voltage VCEO -30 Vdc 6 Collector-Base Voltage VCBO -50 Vdc EMITTER Emit

MMBT6520L, NSVMMBT6520L High Voltage Transistor PNP Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C

MMBT6520L, NSVMMBT6520L High Voltage Transistor PNP Silicon www.onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Coll

MMBT6517L, NSVMMBT6517L High Voltage Transistor NPN Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER C

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

MMBT6517L, NSVMMBT6517L High Voltage Transistor NPN Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER C

MMBT6517LT1G High Voltage Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector - Emitter Voltage VCEO 350 V Collector -Base Voltage VCBO 350 V 3 Emitter - Base Voltage VEBO 5.0 V Base Current IB 25 mA 1 Collector Current - C

MMBT6520LT1G High Voltage Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -350 Vdc Collector-Base Voltage VCBO -350 Vdc 2 EMITTER Emitter-Base Voltage VEBO -5.0 Vdc Base Current IB -250 mA Collector Current -

MMBT6521LT1G Amplifier Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 40 Vdc 2 Emitter-Base Voltage VEBO 4.0 Vdc EMITTER Collector Current Continuous IC 100 mAdc THERMAL

MMBT6427LT1G, SMMBT6427LT1G Darlington Transistor NPN Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SOT-23 (TO-236) CASE 318 STYLE 6 MAXIMUM RATINGS Rating Symbol Value Un

MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G Amplifier Transistors NPN Silicon http //onsemi.com Features COLLECTOR 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 2 EMITTER 3 SOT-23 (TO-236) MAXIM

MMBT6428LT1G, MMBT6429LT1G Amplifier Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol 6428LT1 6429LT1 Unit Collector-Emitter Voltage VCEO 50 45 Vdc Collector-Base Voltage VCBO 60 55 Vdc 3 SOT-23 (TO-236) Emitter-Base Voltage VEBO 6.0 Vdc CA

MMBT6521LT1G, SMMBT6521LT1G Amplifier Transistor NPN Silicon Features www.onsemi.com S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SOT- 23 (TO -236) CASE 318 -08 STYLE 6 MAXIMUM RATINGS COLLECTOR Rating Symbol

MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G Amplifier Transistors NPN Silicon www.onsemi.com Features COLLECTOR 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 2 EMITTER 3 SOT-23 (TO-236) MAXIMUM

MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G Amplifier Transistors NPN Silicon http //onsemi.com Features COLLECTOR 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 2 EMITTER 3 SOT-23 (TO-236) MAXIM

MMBT6428LT1G, MMBT6429LT1G Amplifier Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol 6428LT1 6429LT1 Unit Collector-Emitter Voltage VCEO 50 45 Vdc Collector-Base Voltage VCBO 60 55 Vdc 3 SOT-23 (TO-236) Emitter-Base Voltage VEBO 6.0 Vdc CA

MMBT6517L, NSVMMBT6517L High Voltage Transistor NPN Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER C

MMBT6520L, NSVMMBT6520L High Voltage Transistor PNP Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C

MMBT619 2A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-23 Low saturation voltage A L 3 3 MARKING Top View C B 1 619 1 2 2 K E PACKAGE INFORMATION D Package MPQ Leader Size H J F G SOT-23 3K 7 inch Millimeter Millimeter REF. REF. Min. Max.

MMBT6427 COLLECTOR 3 Darlington Amplifier Transistors NPN * We declare that the material of product compliance with RoHS requirements. BASE 1 P b Lead(Pb)-Free EMITTER 2 MAXIMUM RATINGS 3 Rating Symbol V alue Unit Collector Emitter Voltage V CEO 40 Vdc 1 2 Collector Base Voltage V CBO 40 Vdc Emitter Base Voltage V EBO 12 Vdc SOT-23 Collector Current Continuous I C 5

SEMICONDUCTOR MMBT6428LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package SOT-23 Amplifier Transistors ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 60 V Collector-Emitter Voltage Vceo 50 V Emitter-Base Voltage Vebo 6 V PIN 1 2 3 Collector Current Ic 200 mA STYLE

SMD Type Transistors PNP Transistors MMBT6520 (KMBT6520) SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector-Emitter Voltage VCEO= -350V High Voltage Transistor 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 3 COLLECTOR 1.Base 1 2.Emitter BASE 3.collector 2 EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Co

SMD Type Transistors NPN Transistors MMBT6517 (KMBT6517) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=350V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 3 1.Base COLLECTOR 2.Emitter 3.collector 1 BASE 2 EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com MMBT6517 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 350 V Collector Base Voltage VCBO 350

isc Silicon PNP Power Transistors MMBT6520L DESCRIPTION Collector-Emitter Saturation Voltage- V = -0.3V(Max.)@I = -0.01A CE(sat) C Collector-Emitter Breakdown Voltage- V = -350V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO