MMBT6076 Datasheet. Specs and Replacement
Type Designator: MMBT6076 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO236
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MMBT6076 datasheet
9.1. Size:231K motorola
mmbt6520.pdf 
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mmbt6517.pdf
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9.6. Size:46K fairchild semi
mmbt6428.pdf
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9.8. Size:101K fairchild semi
mmbt6515.pdf
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9.9. Size:62K onsemi
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9.10. Size:123K onsemi
nsvmmbt6520lt1g.pdf
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9.11. Size:196K onsemi
mmbt6520l nsvmmbt6520l.pdf
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9.12. Size:124K onsemi
mmbt6517lt1g.pdf
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9.13. Size:295K onsemi
mmbt6521lt1g.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,... See More ⇒
9.14. Size:124K onsemi
nsvmmbt6517lt1g.pdf
MMBT6517L, NSVMMBT6517L High Voltage Transistor NPN Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER C... See More ⇒
9.15. Size:156K onsemi
mmbt6517lt1.pdf
MMBT6517LT1G High Voltage Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector - Emitter Voltage VCEO 350 V Collector -Base Voltage VCBO 350 V 3 Emitter - Base Voltage VEBO 5.0 V Base Current IB 25 mA 1 Collector Current - C... See More ⇒
9.16. Size:116K onsemi
mmbt6520lt1-d.pdf
MMBT6520LT1G High Voltage Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -350 Vdc Collector-Base Voltage VCBO -350 Vdc 2 EMITTER Emitter-Base Voltage VEBO -5.0 Vdc Base Current IB -250 mA Collector Current - ... See More ⇒
9.17. Size:289K onsemi
mmbt6521lt1.pdf
MMBT6521LT1G Amplifier Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 40 Vdc 2 Emitter-Base Voltage VEBO 4.0 Vdc EMITTER Collector Current Continuous IC 100 mAdc THERMAL... See More ⇒
9.18. Size:120K onsemi
mmbt6427lt1g.pdf
MMBT6427LT1G, SMMBT6427LT1G Darlington Transistor NPN Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SOT-23 (TO-236) CASE 318 STYLE 6 MAXIMUM RATINGS Rating Symbol Value Un... See More ⇒
9.19. Size:125K onsemi
mmbt6429lt1g.pdf
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9.20. Size:194K onsemi
mmbt6428lt1 mmbt6429lt1.pdf
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mmbt6428lt1g mmbt6429lt1g nsvmmbt6429lt1g.pdf
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mmbt6428lt1g.pdf
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9.25. Size:124K onsemi
mmbt6517lt3g.pdf
MMBT6517L, NSVMMBT6517L High Voltage Transistor NPN Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER C... See More ⇒
9.26. Size:123K onsemi
mmbt6520lt1g.pdf
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9.27. Size:57K secos
mmbt619.pdf
MMBT619 2A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-23 Low saturation voltage A L 3 3 MARKING Top View C B 1 619 1 2 2 K E PACKAGE INFORMATION D Package MPQ Leader Size H J F G SOT-23 3K 7 inch Millimeter Millimeter REF. REF. Min. Max. ... See More ⇒
9.28. Size:242K wietron
mmbt6427.pdf
MMBT6427 COLLECTOR 3 Darlington Amplifier Transistors NPN * We declare that the material of product compliance with RoHS requirements. BASE 1 P b Lead(Pb)-Free EMITTER 2 MAXIMUM RATINGS 3 Rating Symbol V alue Unit Collector Emitter Voltage V CEO 40 Vdc 1 2 Collector Base Voltage V CBO 40 Vdc Emitter Base Voltage V EBO 12 Vdc SOT-23 Collector Current Continuous I C 5... See More ⇒
9.29. Size:193K china
mmbt6428lt1.pdf
SEMICONDUCTOR MMBT6428LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package SOT-23 Amplifier Transistors ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 60 V Collector-Emitter Voltage Vceo 50 V Emitter-Base Voltage Vebo 6 V PIN 1 2 3 Collector Current Ic 200 mA STYLE ... See More ⇒
9.30. Size:1328K kexin
mmbt6520.pdf
SMD Type Transistors PNP Transistors MMBT6520 (KMBT6520) SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector-Emitter Voltage VCEO= -350V High Voltage Transistor 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 3 COLLECTOR 1.Base 1 2.Emitter BASE 3.collector 2 EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Co... See More ⇒
9.31. Size:1414K kexin
mmbt6517.pdf
SMD Type Transistors NPN Transistors MMBT6517 (KMBT6517) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=350V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 3 1.Base COLLECTOR 2.Emitter 3.collector 1 BASE 2 EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating... See More ⇒
9.32. Size:1836K eicsemi
mmbt6517.pdf
TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com MMBT6517 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 350 V Collector Base Voltage VCBO 350... See More ⇒
9.33. Size:241K inchange semiconductor
mmbt6520l.pdf
isc Silicon PNP Power Transistors MMBT6520L DESCRIPTION Collector-Emitter Saturation Voltage- V = -0.3V(Max.)@I = -0.01A CE(sat) C Collector-Emitter Breakdown Voltage- V = -350V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒
Detailed specifications: MMBT5551R, MMBT5771, MMBT5816, MMBT5855, MMBT5856, MMBT5857, MMBT5858, MMBT5910, BD222, MMBT6427, MMBT6427LT1, MMBT6428, MMBT6429, MMBT6517, MMBT6520, MMBT6543, MMBT8598
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