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MMBT6427LT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBT6427LT1
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.35 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 12 V
   Corriente del colector DC máxima (Ic): 0.35 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 7 pF
   Ganancia de corriente contínua (hfe): 50000
   Paquete / Cubierta: SOT323

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MMBT6427LT1 Datasheet (PDF)

 0.1. Size:120K  onsemi
mmbt6427lt1g.pdf

MMBT6427LT1 MMBT6427LT1

MMBT6427LT1G,SMMBT6427LT1GDarlington TransistorNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23 (TO-236)CASE 318STYLE 6MAXIMUM RATINGSRating Symbol Value Un

 6.1. Size:249K  motorola
mmbt6427.pdf

MMBT6427LT1 MMBT6427LT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT6427LT1/DDarlington TransistorMMBT6427LT1NPN SiliconMotorola Preferred DeviceCOLLECTOR 3BASE13EMITTER 21MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 40 VdcEmitterBase Voltage VEBO 12

 6.2. Size:706K  fairchild semi
2n6427 mmbt6427.pdf

MMBT6427LT1 MMBT6427LT1

2N6427 MMBT6427CEC TO-92BBSOT-23EMark: 1VNPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 1.0 A. Sourced fromProcess 05. See MPSA14 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collect

 6.3. Size:242K  wietron
mmbt6427.pdf

MMBT6427LT1 MMBT6427LT1

MMBT6427COLLECTOR 3Darlington AmplifierTransistorsNPN* We declare that the material of product compliance with RoHS requirements.BASE1P b Lead(Pb)-FreeEMITTER 2MAXIMUM RATINGS3Rating Symbol V alue UnitCollectorEmitter Voltage V CEO 40 Vdc12CollectorBase Voltage V CBO 40 VdcEmitterBase Voltage V EBO 12 VdcSOT-23Collector Current Continuous I C 5

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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