MMBT6520 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT6520
Código: 2Z
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 350 V
Tensión colector-emisor (Vce): 350 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 40 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar MMBT6520
MMBT6520 Datasheet (PDF)
mmbt6520.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT6520LT1/DHigh Voltage TransistorMMBT6520LT1PNP SiliconMotorola Preferred DeviceCOLLECTOR31BASE32EMITTER12MAXIMUM RATINGSRating Symbol Value UnitCASE 31808, STYLE 6SOT23 (TO236AB)CollectorEmitter Voltage VCEO 350 VdcCollectorBase Voltage VCBO 350 VdcEmitterBase Volt
mmbt6520.pdf
SMD Type TransistorsPNP TransistorsMMBT6520 (KMBT6520)SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector-Emitter Voltage: VCEO= -350V High Voltage Transistor1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.13COLLECTOR1.Base12.EmitterBASE3.collector2EMITTER Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Co
nsvmmbt6520lt1g.pdf
MMBT6520L,NSVMMBT6520LHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1BASECompliant2EMITTERMAXIMUM RATINGSRating Symbol Value UnitC
mmbt6520l nsvmmbt6520l.pdf
MMBT6520L,NSVMMBT6520LHigh Voltage TransistorPNP Siliconwww.onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1BASECompliant2EMITTERMAXIMUM RATINGSRating Symbol Value UnitColl
mmbt6520lt1-d.pdf
MMBT6520LT1GHigh Voltage TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -350 VdcCollector-Base Voltage VCBO -350 Vdc2EMITTEREmitter-Base Voltage VEBO -5.0 VdcBase Current IB -250 mACollector Current -
mmbt6520lt1g.pdf
MMBT6520L,NSVMMBT6520LHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1BASECompliant2EMITTERMAXIMUM RATINGSRating Symbol Value UnitC
mmbt6520l.pdf
isc Silicon PNP Power Transistors MMBT6520LDESCRIPTIONCollector-Emitter Saturation Voltage-: V = -0.3V(Max.)@I = -0.01ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -350V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
