MMBT6543 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT6520LT1/DHigh Voltage TransistorMMBT6520LT1PNP SiliconMotorola Preferred DeviceCOLLECTOR31BASE32EMITTER12MAXIMUM RATINGSRating Symbol Value UnitCASE 31808, STYLE 6SOT23 (TO236AB)CollectorEmitter Voltage VCEO 350 VdcCollectorBase Voltage VCBO 350 VdcEmitterBase Volt

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT6517LT1/DHigh Voltage TransistorMMBT6517LT1NPN SiliconMotorola Preferred DeviceCOLLECTOR31BASE32EMITTER1MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO 350 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 350 VdcEmitterBase Voltage VE

MPS6515/MMBT6515NPN General Purpose Amplifier3 This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a 2switch and to 100MHz as an amplifier.SOT-23TO-92 1Mark: 3J11. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25C unless otherwise notedSymbol Parameter Valu

MPS6515/MMBT6515NPN General Purpose Amplifier3 This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a 2switch and to 100MHz as an amplifier.SOT-23TO-92 1Mark: 3J11. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25C unless otherwise notedSymbol Parameter Valu

MMBT6589T1High Current SurfaceMount PNP SiliconSwitching Transistor forLoad Management inhttp://onsemi.comPortable Applications30 VOLTS, 2.0 AMPSFeaturesPNP TRANSISTOR Pb-Free Package is AvailableCOLLECTOR1, 2, 5MAXIMUM RATINGS (TA = 25C)3Rating Symbol Max UnitBASECollector-Emitter Voltage VCEO -30 Vdc6Collector-Base Voltage VCBO -50 VdcEMITTEREmit

MMBT6520L,NSVMMBT6520LHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1BASECompliant2EMITTERMAXIMUM RATINGSRating Symbol Value UnitC

MMBT6520L,NSVMMBT6520LHigh Voltage TransistorPNP Siliconwww.onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1BASECompliant2EMITTERMAXIMUM RATINGSRating Symbol Value UnitColl

MMBT6517L,NSVMMBT6517LHigh Voltage TransistorNPN Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERC

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MMBT6517L,NSVMMBT6517LHigh Voltage TransistorNPN Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERC

MMBT6517LT1GHigh Voltage TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR31BASEMAXIMUM RATINGSRating Symbol Value Unit 2EMITTERCollector - Emitter Voltage VCEO 350 VCollector -Base Voltage VCBO 350 V3Emitter - Base Voltage VEBO 5.0 VBase Current IB 25 mA1Collector Current - C

MMBT6520LT1GHigh Voltage TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -350 VdcCollector-Base Voltage VCBO -350 Vdc2EMITTEREmitter-Base Voltage VEBO -5.0 VdcBase Current IB -250 mACollector Current -

MMBT6521LT1GAmplifier TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1BASECollector-Emitter Voltage VCEO 25 VdcCollector-Base Voltage VCBO 40 Vdc2Emitter-Base Voltage VEBO 4.0 VdcEMITTERCollector Current Continuous IC 100 mAdcTHERMAL

MMBT6521LT1G,SMMBT6521LT1GAmplifier TransistorNPN SiliconFeatureswww.onsemi.com S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantSOT- 23 (TO -236)CASE 318 -08STYLE 6MAXIMUM RATINGSCOLLECTORRating Symbol

MMBT6517L,NSVMMBT6517LHigh Voltage TransistorNPN Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERC

MMBT6520L,NSVMMBT6520LHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1BASECompliant2EMITTERMAXIMUM RATINGSRating Symbol Value UnitC

SMD Type TransistorsPNP TransistorsMMBT6520 (KMBT6520)SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector-Emitter Voltage: VCEO= -350V High Voltage Transistor1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.13COLLECTOR1.Base12.EmitterBASE3.collector2EMITTER Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Co

SMD Type TransistorsNPN TransistorsMMBT6517 (KMBT6517)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=350V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9-0.131.BaseCOLLECTOR2.Emitter3.collector1BASE2EMITTER Absolute Maximum Ratings Ta = 25Parameter Symbol Rating

TH09/2479TH97/2478 IATF 0113686SGS TH07/1033www.eicsemi.comMMBT6517 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations. TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit350 VCollector Base Voltage VCBO350

isc Silicon PNP Power Transistors MMBT6520LDESCRIPTIONCollector-Emitter Saturation Voltage-: V = -0.3V(Max.)@I = -0.01ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -350V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO