MMBT6543 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT6543
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 750 MHz
Capacitancia de salida (Cc): 1 pF
Ganancia de corriente contínua (hFE): 28
Encapsulados: SOT23
Búsqueda de reemplazo de MMBT6543
- Selecciónⓘ de transistores por parámetros
MMBT6543 datasheet
8.1. Size:231K motorola
mmbt6520.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT6520LT1/D High Voltage Transistor MMBT6520LT1 PNP Silicon Motorola Preferred Device COLLECTOR 3 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Emitter Voltage VCEO 350 Vdc Collector Base Voltage VCBO 350 Vdc Emitter Base Volt
8.2. Size:230K motorola
mmbt6517.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT6517LT1/D High Voltage Transistor MMBT6517LT1 NPN Silicon Motorola Preferred Device COLLECTOR 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCEO 350 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 350 Vdc Emitter Base Voltage VE
8.3. Size:103K fairchild semi
mmbt6515 mps6515.pdf
MPS6515/MMBT6515 NPN General Purpose Amplifier 3 This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a 2 switch and to 100MHz as an amplifier. SOT-23 TO-92 1 Mark 3J 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Valu
8.4. Size:101K fairchild semi
mmbt6515.pdf
MPS6515/MMBT6515 NPN General Purpose Amplifier 3 This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a 2 switch and to 100MHz as an amplifier. SOT-23 TO-92 1 Mark 3J 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Valu
8.5. Size:62K onsemi
mmbt6589t1-d.pdf
MMBT6589T1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in http //onsemi.com Portable Applications 30 VOLTS, 2.0 AMPS Features PNP TRANSISTOR Pb-Free Package is Available COLLECTOR 1, 2, 5 MAXIMUM RATINGS (TA = 25 C) 3 Rating Symbol Max Unit BASE Collector-Emitter Voltage VCEO -30 Vdc 6 Collector-Base Voltage VCBO -50 Vdc EMITTER Emit
8.6. Size:123K onsemi
nsvmmbt6520lt1g.pdf
MMBT6520L, NSVMMBT6520L High Voltage Transistor PNP Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C
8.7. Size:196K onsemi
mmbt6520l nsvmmbt6520l.pdf
MMBT6520L, NSVMMBT6520L High Voltage Transistor PNP Silicon www.onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Coll
8.8. Size:124K onsemi
mmbt6517lt1g.pdf
MMBT6517L, NSVMMBT6517L High Voltage Transistor NPN Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER C
8.9. Size:295K onsemi
mmbt6521lt1g.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
8.10. Size:124K onsemi
nsvmmbt6517lt1g.pdf
MMBT6517L, NSVMMBT6517L High Voltage Transistor NPN Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER C
8.11. Size:156K onsemi
mmbt6517lt1.pdf
MMBT6517LT1G High Voltage Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector - Emitter Voltage VCEO 350 V Collector -Base Voltage VCBO 350 V 3 Emitter - Base Voltage VEBO 5.0 V Base Current IB 25 mA 1 Collector Current - C
8.12. Size:116K onsemi
mmbt6520lt1-d.pdf
MMBT6520LT1G High Voltage Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -350 Vdc Collector-Base Voltage VCBO -350 Vdc 2 EMITTER Emitter-Base Voltage VEBO -5.0 Vdc Base Current IB -250 mA Collector Current -
8.13. Size:289K onsemi
mmbt6521lt1.pdf
MMBT6521LT1G Amplifier Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 40 Vdc 2 Emitter-Base Voltage VEBO 4.0 Vdc EMITTER Collector Current Continuous IC 100 mAdc THERMAL
8.14. Size:244K onsemi
mmbt6521lt1g smmbt6521lt1g.pdf
MMBT6521LT1G, SMMBT6521LT1G Amplifier Transistor NPN Silicon Features www.onsemi.com S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SOT- 23 (TO -236) CASE 318 -08 STYLE 6 MAXIMUM RATINGS COLLECTOR Rating Symbol
8.15. Size:124K onsemi
mmbt6517lt3g.pdf
MMBT6517L, NSVMMBT6517L High Voltage Transistor NPN Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER C
8.16. Size:123K onsemi
mmbt6520lt1g.pdf
MMBT6520L, NSVMMBT6520L High Voltage Transistor PNP Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C
8.17. Size:1328K kexin
mmbt6520.pdf
SMD Type Transistors PNP Transistors MMBT6520 (KMBT6520) SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector-Emitter Voltage VCEO= -350V High Voltage Transistor 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 3 COLLECTOR 1.Base 1 2.Emitter BASE 3.collector 2 EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Co
8.18. Size:1414K kexin
mmbt6517.pdf
SMD Type Transistors NPN Transistors MMBT6517 (KMBT6517) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=350V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 3 1.Base COLLECTOR 2.Emitter 3.collector 1 BASE 2 EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
8.19. Size:1836K eicsemi
mmbt6517.pdf
TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com MMBT6517 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 350 V Collector Base Voltage VCBO 350
8.20. Size:241K inchange semiconductor
mmbt6520l.pdf
isc Silicon PNP Power Transistors MMBT6520L DESCRIPTION Collector-Emitter Saturation Voltage- V = -0.3V(Max.)@I = -0.01A CE(sat) C Collector-Emitter Breakdown Voltage- V = -350V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
Otros transistores... MMBT5910, MMBT6076, MMBT6427, MMBT6427LT1, MMBT6428, MMBT6429, MMBT6517, MMBT6520, 2N5551, MMBT8598, MMBT8599, MMBT918, MMBT918R, MMBT930, MMBT930R, MMBTA05, MMBTA05LT1
