MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT6520LT1/DHigh Voltage TransistorMMBT6520LT1PNP SiliconMotorola Preferred DeviceCOLLECTOR31BASE32EMITTER12MAXIMUM RATINGSRating Symbol Value UnitCASE 31808, STYLE 6SOT23 (TO236AB)CollectorEmitter Voltage VCEO 350 VdcCollectorBase Voltage VCBO 350 VdcEmitterBase Volt

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT6517LT1/DHigh Voltage TransistorMMBT6517LT1NPN SiliconMotorola Preferred DeviceCOLLECTOR31BASE32EMITTER1MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO 350 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 350 VdcEmitterBase Voltage VE

MPS6515/MMBT6515NPN General Purpose Amplifier3 This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a 2switch and to 100MHz as an amplifier.SOT-23TO-92 1Mark: 3J11. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25C unless otherwise notedSymbol Parameter Valu

MPS6515/MMBT6515NPN General Purpose Amplifier3 This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a 2switch and to 100MHz as an amplifier.SOT-23TO-92 1Mark: 3J11. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25C unless otherwise notedSymbol Parameter Valu

MMBT6589T1High Current SurfaceMount PNP SiliconSwitching Transistor forLoad Management inhttp://onsemi.comPortable Applications30 VOLTS, 2.0 AMPSFeaturesPNP TRANSISTOR Pb-Free Package is AvailableCOLLECTOR1, 2, 5MAXIMUM RATINGS (TA = 25C)3Rating Symbol Max UnitBASECollector-Emitter Voltage VCEO -30 Vdc6Collector-Base Voltage VCBO -50 VdcEMITTEREmit

MMBT6520L,NSVMMBT6520LHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1BASECompliant2EMITTERMAXIMUM RATINGSRating Symbol Value UnitC

MMBT6520L,NSVMMBT6520LHigh Voltage TransistorPNP Siliconwww.onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1BASECompliant2EMITTERMAXIMUM RATINGSRating Symbol Value UnitColl

MMBT6517L,NSVMMBT6517LHigh Voltage TransistorNPN Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERC

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

MMBT6517L,NSVMMBT6517LHigh Voltage TransistorNPN Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERC

MMBT6517LT1GHigh Voltage TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR31BASEMAXIMUM RATINGSRating Symbol Value Unit 2EMITTERCollector - Emitter Voltage VCEO 350 VCollector -Base Voltage VCBO 350 V3Emitter - Base Voltage VEBO 5.0 VBase Current IB 25 mA1Collector Current - C

MMBT6520LT1GHigh Voltage TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -350 VdcCollector-Base Voltage VCBO -350 Vdc2EMITTEREmitter-Base Voltage VEBO -5.0 VdcBase Current IB -250 mACollector Current -

MMBT6521LT1GAmplifier TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1BASECollector-Emitter Voltage VCEO 25 VdcCollector-Base Voltage VCBO 40 Vdc2Emitter-Base Voltage VEBO 4.0 VdcEMITTERCollector Current Continuous IC 100 mAdcTHERMAL

MMBT6521LT1G,SMMBT6521LT1GAmplifier TransistorNPN SiliconFeatureswww.onsemi.com S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantSOT- 23 (TO -236)CASE 318 -08STYLE 6MAXIMUM RATINGSCOLLECTORRating Symbol

MMBT6517L,NSVMMBT6517LHigh Voltage TransistorNPN Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERC

MMBT6520L,NSVMMBT6520LHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1BASECompliant2EMITTERMAXIMUM RATINGSRating Symbol Value UnitC

SMD Type TransistorsPNP TransistorsMMBT6520 (KMBT6520)SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector-Emitter Voltage: VCEO= -350V High Voltage Transistor1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.13COLLECTOR1.Base12.EmitterBASE3.collector2EMITTER Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Co

SMD Type TransistorsNPN TransistorsMMBT6517 (KMBT6517)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=350V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9-0.131.BaseCOLLECTOR2.Emitter3.collector1BASE2EMITTER Absolute Maximum Ratings Ta = 25Parameter Symbol Rating

TH09/2479TH97/2478 IATF 0113686SGS TH07/1033www.eicsemi.comMMBT6517 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations. TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit350 VCollector Base Voltage VCBO350

isc Silicon PNP Power Transistors MMBT6520LDESCRIPTIONCollector-Emitter Saturation Voltage-: V = -0.3V(Max.)@I = -0.01ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -350V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO