MMBTA14 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBTA14
Código: 1N_K3D_s1N
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.33 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 25000
Encapsulados: TO236
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MMBTA14 datasheet
..1. Size:235K motorola
mmbta13 mmbta14.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA13LT1/D MMBTA13LT1 Darlington Amplifier Transistors MMBTA14LT1 * NPN Silicon COLLECTOR 3 *Motorola Preferred Device BASE 1 3 EMITTER 2 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCES 30 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 30 Vdc Emitte
..2. Size:887K fairchild semi
mmbta14.pdf
MPSA14 MMBTA14 PZTA14 C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 30 V VCBO Collector-Ba
..3. Size:525K infineon
smbta14 mmbta14.pdf
SMBTA14/MMBTA14 NPN Silicon Darlington Transistor High collector current 2 3 Low collector-emitter saturation voltage 1 Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA14/MMBTA14 s1N SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 30 V Collector-emitter voltage VCES 30 Collector-base voltage
..4. Size:167K kec
mmbta13 mmbta14.pdf
SEMICONDUCTOR MMBTA13/14 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. E L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 MAXIMUM RATING (Ta=25 ) E 2.40+0.30/-0.20 1 G 1.90 CHARACTERISTIC SYMBOL RATING UNIT H 0.95 J 0.13+0.10/-0.05 VCBO Collector-Base Voltage 30 V K 0.00 0.10
..5. Size:681K htsemi
mmbta13 mmbta14.pdf
MMBTA13,14 TRANSISTOR (NPN) SOT-23 FEATURES Darlington Amplifier Unit mm 1. BASE Marking MMBTA13 K2D; MMBTA14 K3D 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 0.3 A PC C
..6. Size:397K lge
mmbta13 mmbta14.pdf
MMBTA13,14 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Darlington Amplifier Marking MMBTA13 K2D; MMBTA14 K3D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector
..7. Size:334K first silicon
mmbta14.pdf
SEMICONDUCTOR MMBTA14 TECHNICAL DATA Darlington Amplifier Transistors We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION 2 Device Marking Shipping 1 MMBTA13 1M 3000/Tape & Reel MMBTA14 1N 3000/Tape & Reel SOT 23 MAXIMUM RATINGS COLLECTOR Rating Symbol Value Unit 3 Collector Emitter Voltage V 30 Vdc CES 1 Collector Base Vol
..8. Size:845K kexin
mmbta14.pdf
SMD Type Diodes Darlington Transistors MMBTA14 (KMBTA14) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=30V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO
0.1. Size:791K onsemi
mmbta13lt1g mmbta14lt1g.pdf
MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L Darlington Amplifier Transistors NPN Silicon http //onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT-23 (TO-236) Compliant* CASE 318 STYLE 6 COLLECTOR 3 MAXIM
0.2. Size:879K secos
mmbta13-mmbta14.pdf
MMBTA13 MMBTA14 Elektronische Bauelemente Darlington Amplifier Transistor NPN Silicon RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A L A 2.800 3.040 COLLECTOR 3 B 1.200 1.400 3 3 C 0.890 1.110 S BASE 1 B 1 2 1 D 0.370 0.500 2 G 1.780 2.040 V G EMITTER 2 H 0.013 0.100 J 0.085 0.177 C FEATURES K 0.450 0.600 H J L 0.890 1.0
8.1. Size:48K fairchild semi
mmbta13.pdf
January 2005 MMBTA13 NPN Darlington Transistor This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics. 3 2 SOT-23 1 Mark 1M 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-
8.2. Size:8K utc
mmbta13.pdf
UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a darlington transistor. FEATURES 1 *Collector-Emitter Voltage Vces = 30V *Collector Dissipation Pc ( mas ) = 625 mW SOT-23 1 EMITTER 2 BASE 3 COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-B
8.4. Size:692K jiangsu
mmbta13.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA13 TRANSISTOR (NPN) Unit mm FEATURES 1. BASE Darlington Amplifier 2. EMITTER 3. COLLECTOR Marking K2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base
8.5. Size:273K wietron
mmbta13-14.pdf
MMBTA13 MMBTA14 COLLECTOR 3 Darlington Amplifier Transistors NPN BASE 1 EMITTER 2 MA XIMUM R AT ING S R ating S ymbol Value Unit C ollector- E mitter Voltage V 30 V dc C E S 3 C ollector- B as e Voltage V 30 V dc C B O 1 E mitter- B as e Voltage V 10 V dc E B O 2 C ollector C urrent - C ontinuous IC 300 mAdc T HE R MA L C HA R A C T E R IS T IC S S OT -23 C harac teris t
8.6. Size:440K willas
mmbta1xlt1.pdf
MMBTA1xLT1 Darlington Amplifier Transistors We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping MMBTA13LT1 1M 3000/Tape & Reel MMBTA14LT1 1N 3000/Tape & Reel MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CES 30 Vdc SOT 23 Collector Base Voltage V CBO 30 Vdc Emitter Base Voltage V
8.7. Size:31K semtech
mmbta10 mmbta11.pdf
MMBTA10 / MMBTA11 NPN Silicon Epitaxial Planar Transistor VHF / UHF transistor TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 oC) Parameter Symbol Rating Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 3 V Collector Current IC 100 mA Total Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O Storage Temperatur
8.8. Size:239K first silicon
mmbta10q.pdf
SEMICONDUCTOR MMBTH10Q TECHNICAL DATA VHF/UHF Transistors We declare that the material of product compliance with RoHS requirements. Ordering Information Device Marking Shipping 3000/Tape&Reel MMBTH10Q 3EQ 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit 1 Collector Emitter Voltage V CEO 25 V SOT 23 Collector Base Voltage V CBO 30 V Emitter Base Voltage V EBO 3.0 V COLLE
8.9. Size:1156K kexin
mmbta13.pdf
SMD Type Diodes Darlington Transistors MMBTA13 (KMBTA13) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=30V 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO
Otros transistores... MMBT930R, MMBTA05, MMBTA05LT1, MMBTA06, MMBTA06LT1, MMBTA12, MMBTA13, MMBTA13LT1, BD140, MMBTA14LT1, MMBTA20, MMBTA20LT1, MMBTA28, MMBTA42, MMBTA42LT1, MMBTA43, MMBTA43LT1
