MMBTA14 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA13LT1/DMMBTA13LT1Darlington Amplifier TransistorsMMBTA14LT1*NPN SiliconCOLLECTOR 3*Motorola Preferred DeviceBASE13EMITTER 21MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCES 30 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 30 VdcEmitte

MPSA14 MMBTA14 PZTA14CCEECBC TO-92BSOT-23BSOT-223EMark: 1NNPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 1.0 A. Sourcedfrom Process 05.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 30 VVCBO Collector-Ba

SMBTA14/MMBTA14NPN Silicon Darlington Transistor High collector current23 Low collector-emitter saturation voltage1 Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageSMBTA14/MMBTA14 s1N SOT231=B 2=E 3=CMaximum RatingsParameter Symbol Value Unit30 VCollector-emitter voltage VCES30Collector-base voltage

SEMICONDUCTOR MMBTA13/14TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR.EL B LDIM MILLIMETERS_+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05MAXIMUM RATING (Ta=25 )E 2.40+0.30/-0.201G 1.90CHARACTERISTIC SYMBOL RATING UNITH 0.95J 0.13+0.10/-0.05VCBOCollector-Base Voltage 30 VK 0.00 ~ 0.10

MMBTA13,14 TRANSISTOR (NPN) SOT-23 FEATURES Darlington Amplifier Unit : mm 1. BASE Marking : MMBTA13:K2D; MMBTA14:K3D 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 0.3 A PC C

MMBTA13,14 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Darlington Amplifier Marking : MMBTA13:K2D; MMBTA14:K3D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector

SEMICONDUCTORMMBTA14TECHNICAL DATADarlington Amplifier TransistorsWe declare that the material of productcompliance with RoHS requirements.3ORDERING INFORMATION2Device Marking Shipping1MMBTA13 1M 3000/Tape & ReelMMBTA14 1N 3000/Tape & ReelSOT23MAXIMUM RATINGSCOLLECTORRating Symbol Value Unit 3CollectorEmitter Voltage V 30 VdcCES1CollectorBase Vol

SMD Type DiodesDarlington TransistorsMMBTA14 (KMBTA14)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=30V1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

MMBTA13L, SMMBTA13L,MMBTA14L, SMMBTA14LDarlington AmplifierTransistorsNPN Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23 (TO-236)Compliant* CASE 318STYLE 6COLLECTOR 3MAXIM

MMBTA13 MMBTA14Elektronische Bauelemente Darlington Amplifier Transistor NPN SiliconRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23Dim Min MaxAL A 2.800 3.040COLLECTOR 3B 1.200 1.4003 3C 0.890 1.110SBASE 1 B1 21 D 0.370 0.5002G 1.780 2.040V GEMITTER 2H 0.013 0.100J 0.085 0.177CFEATURES K 0.450 0.600HJL 0.890 1.0

January 2005MMBTA13NPN Darlington Transistor This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics.32SOT-231Mark: 1M1. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-

UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTORDARLINGTON TRANSISTORDESCRIPTIONThe UTC MMBTA13 is a darlington transistor.FEATURES1*Collector-Emitter Voltage: Vces = 30V*Collector Dissipation : Pc ( mas ) = 625 mWSOT-231:EMITTER 2:BASE 3:COLLECTORABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )PARAMETER SYMBOL VALUE UNITCollector-B

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA13 TRANSISTOR (NPN) Unit : mm FEATURES1. BASE Darlington Amplifier 2. EMITTER3. COLLECTORMarking : K2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base

MMBTA13MMBTA14COLLECTOR 3Darlington AmplifierTransistorsNPN BASE1EMITTER 2MA XIMUM R AT ING SR ating S ymbol Value UnitC ollector- E mitter Voltage V 30 V dcC E S 3C ollector- B as e Voltage V 30 V dcC B O1E mitter- B as e Voltage V 10 V dcE B O2C ollector C urrent - C ontinuous IC 300 mAdcT HE R MA L C HA R A C T E R IS T IC SS OT -23 C harac teris t

MMBTA1xLT1Darlington Amplifier Transistors We declare that the material of productcompliance with RoHS requirements.ORDERING INFORMATIONDevice Marking ShippingMMBTA13LT1 1M 3000/Tape & ReelMMBTA14LT1 1N 3000/Tape & ReelMAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage V CES 30 VdcSOT23CollectorBase Voltage V CBO 30 VdcEmitterBase Voltage V

MMBTA10 / MMBTA11 NPN Silicon Epitaxial Planar Transistor VHF / UHF transistor TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 oC)Parameter Symbol Rating UnitCollector Base Voltage VCBO 30 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 3 VCollector Current IC 100 mATotal Dissipation Ptot 200 mWOJunction Temperature Tj 150 C OStorage Temperatur

SEMICONDUCTORMMBTH10QTECHNICAL DATAVHF/UHF TransistorsWe declare that the material of product compliance with RoHS requirements.Ordering InformationDevice Marking Shipping3000/Tape&Reel MMBTH10Q 3EQ3MAXIMUM RATINGS2Rating Symbol Value Unit1CollectorEmitter Voltage V CEO 25 V SOT23CollectorBase Voltage V CBO 30 VEmitterBase Voltage V EBO 3.0 VCOLLE

SMD Type DiodesDarlington TransistorsMMBTA13 (KMBTA13)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=30V1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO