MMBTA14 PDF and Equivalents Search

 ..1. Size:235K  motorola

 mmbta13 mmbta14.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA13LT1/D MMBTA13LT1 Darlington Amplifier Transistors MMBTA14LT1 * NPN Silicon COLLECTOR 3 *Motorola Preferred Device BASE 1 3 EMITTER 2 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCES 30 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 30 Vdc Emitte... See More ⇒

 ..2. Size:887K  fairchild semi

 mmbta14.pdf

MPSA14 MMBTA14 PZTA14 C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 30 V VCBO Collector-Ba... See More ⇒

 ..3. Size:525K  infineon

 smbta14 mmbta14.pdf

SMBTA14/MMBTA14 NPN Silicon Darlington Transistor High collector current 2 3 Low collector-emitter saturation voltage 1 Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA14/MMBTA14 s1N SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 30 V Collector-emitter voltage VCES 30 Collector-base voltage... See More ⇒

 ..4. Size:167K  kec

 mmbta13 mmbta14.pdf

SEMICONDUCTOR MMBTA13/14 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. E L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 MAXIMUM RATING (Ta=25 ) E 2.40+0.30/-0.20 1 G 1.90 CHARACTERISTIC SYMBOL RATING UNIT H 0.95 J 0.13+0.10/-0.05 VCBO Collector-Base Voltage 30 V K 0.00 0.10 ... See More ⇒

 ..5. Size:681K  htsemi

 mmbta13 mmbta14.pdf

MMBTA13,14 TRANSISTOR (NPN) SOT-23 FEATURES Darlington Amplifier Unit mm 1. BASE Marking MMBTA13 K2D; MMBTA14 K3D 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 0.3 A PC C... See More ⇒

 ..6. Size:397K  lge

 mmbta13 mmbta14.pdf

MMBTA13,14 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Darlington Amplifier Marking MMBTA13 K2D; MMBTA14 K3D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector... See More ⇒

 ..7. Size:334K  first silicon

 mmbta14.pdf

SEMICONDUCTOR MMBTA14 TECHNICAL DATA Darlington Amplifier Transistors We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION 2 Device Marking Shipping 1 MMBTA13 1M 3000/Tape & Reel MMBTA14 1N 3000/Tape & Reel SOT 23 MAXIMUM RATINGS COLLECTOR Rating Symbol Value Unit 3 Collector Emitter Voltage V 30 Vdc CES 1 Collector Base Vol... See More ⇒

 ..8. Size:845K  kexin

 mmbta14.pdf

SMD Type Diodes Darlington Transistors MMBTA14 (KMBTA14) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=30V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO ... See More ⇒

 0.1. Size:791K  onsemi

 mmbta13lt1g mmbta14lt1g.pdf

MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L Darlington Amplifier Transistors NPN Silicon http //onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT-23 (TO-236) Compliant* CASE 318 STYLE 6 COLLECTOR 3 MAXIM... See More ⇒

 0.2. Size:879K  secos

 mmbta13-mmbta14.pdf

MMBTA13 MMBTA14 Elektronische Bauelemente Darlington Amplifier Transistor NPN Silicon RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A L A 2.800 3.040 COLLECTOR 3 B 1.200 1.400 3 3 C 0.890 1.110 S BASE 1 B 1 2 1 D 0.370 0.500 2 G 1.780 2.040 V G EMITTER 2 H 0.013 0.100 J 0.085 0.177 C FEATURES K 0.450 0.600 H J L 0.890 1.0... See More ⇒

 8.1. Size:48K  fairchild semi

 mmbta13.pdf

January 2005 MMBTA13 NPN Darlington Transistor This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics. 3 2 SOT-23 1 Mark 1M 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-... See More ⇒

 8.2. Size:8K  utc

 mmbta13.pdf

UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a darlington transistor. FEATURES 1 *Collector-Emitter Voltage Vces = 30V *Collector Dissipation Pc ( mas ) = 625 mW SOT-23 1 EMITTER 2 BASE 3 COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-B... See More ⇒

 8.3. Size:579K  no

 mmbta10 mmbta11.pdf

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 8.4. Size:692K  jiangsu

 mmbta13.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA13 TRANSISTOR (NPN) Unit mm FEATURES 1. BASE Darlington Amplifier 2. EMITTER 3. COLLECTOR Marking K2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base... See More ⇒

 8.5. Size:273K  wietron

 mmbta13-14.pdf

MMBTA13 MMBTA14 COLLECTOR 3 Darlington Amplifier Transistors NPN BASE 1 EMITTER 2 MA XIMUM R AT ING S R ating S ymbol Value Unit C ollector- E mitter Voltage V 30 V dc C E S 3 C ollector- B as e Voltage V 30 V dc C B O 1 E mitter- B as e Voltage V 10 V dc E B O 2 C ollector C urrent - C ontinuous IC 300 mAdc T HE R MA L C HA R A C T E R IS T IC S S OT -23 C harac teris t... See More ⇒

 8.6. Size:440K  willas

 mmbta1xlt1.pdf

MMBTA1xLT1 Darlington Amplifier Transistors We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping MMBTA13LT1 1M 3000/Tape & Reel MMBTA14LT1 1N 3000/Tape & Reel MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CES 30 Vdc SOT 23 Collector Base Voltage V CBO 30 Vdc Emitter Base Voltage V ... See More ⇒

 8.7. Size:31K  semtech

 mmbta10 mmbta11.pdf

MMBTA10 / MMBTA11 NPN Silicon Epitaxial Planar Transistor VHF / UHF transistor TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 oC) Parameter Symbol Rating Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 3 V Collector Current IC 100 mA Total Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O Storage Temperatur... See More ⇒

 8.8. Size:239K  first silicon

 mmbta10q.pdf

SEMICONDUCTOR MMBTH10Q TECHNICAL DATA VHF/UHF Transistors We declare that the material of product compliance with RoHS requirements. Ordering Information Device Marking Shipping 3000/Tape&Reel MMBTH10Q 3EQ 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit 1 Collector Emitter Voltage V CEO 25 V SOT 23 Collector Base Voltage V CBO 30 V Emitter Base Voltage V EBO 3.0 V COLLE... See More ⇒

 8.9. Size:1156K  kexin

 mmbta13.pdf

SMD Type Diodes Darlington Transistors MMBTA13 (KMBTA13) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=30V 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO ... See More ⇒

 8.10. Size:519K  fuxinsemi

 mmbta13.pdf

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