MMBTA28 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBTA28

Código: 3SS_K6R

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.35 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 12 V

Corriente del colector DC máxima (Ic): 0.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 125 MHz

Capacitancia de salida (Cc): 8 pF

Ganancia de corriente contínua (hFE): 10000

Encapsulados: SOT23

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MMBTA28 datasheet

 ..1. Size:870K  fairchild semi
mmbta28.pdf pdf_icon

MMBTA28

MPSA28 MMBTA28 PZTA28 C C E E C B TO-92 C B SuperSOT-3 B SOT-223 E Mark 3SS NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 80 V VCBO Colle

 ..2. Size:628K  fairchild semi
mpsa28 mmbta28 pzta28.pdf pdf_icon

MMBTA28

MPSA28 MMBTA28 PZTA28 C C E E C B TO-92 C B SuperSOT-3 B SOT-223 E Mark 3SS NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 80 V VCBO Colle

 ..3. Size:356K  htsemi
mmbta28.pdf pdf_icon

MMBTA28

MMBTA28 TRANSISTOR(NPN) FEATURES SOT 23 High Current Gain MARKING 3SS MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 80 V CBO 2. EMITTER V Collector-Emitter Voltage 80 V CEO 3. COLLECTOR V Emitter-Base Voltage 12 V EBO IC Collector Current 500 mA PC Collector Power Dissipation 200 mW R Thermal

 0.1. Size:645K  jiangsu
ad-mmbta28.pdf pdf_icon

MMBTA28

www.jscj-elec.com AD-MMBTA28 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBTA28 Plastic-Encapsulated Transistor AD-MMBTA28 Transistor (NPN) FEATURES High current gain AEC-Q101 qualified MARKING 3SS = Device code 3SS EQUIVALENT CIRCUIT 3 1 2 Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-MMBTA28 MAXIMUM RATINGS (T = 25 C unless otherw

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