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MMBTA55LT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBTA55LT1
   Código: 2H
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.33 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar MMBTA55LT1

 

MMBTA55LT1 Datasheet (PDF)

 ..1. Size:103K  onsemi
mmbta55lt1 mmbta56lt1.pdf

MMBTA55LT1 MMBTA55LT1

MMBTA55LT1G,MMBTA56LT1GDriver TransistorsPNP Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31BASEMAXIMUM RATINGS2EMITTERRating Symbol Value UnitCollector-Emitter Voltage VCEO VdcMMBTA55 -603MMBTA56 -80Collector-Base Voltage VCBO VdcMMBTA55 -60 1MMBTA56 -802Emitter-Base Voltage VE

 0.1. Size:112K  onsemi
mmbta55lt1g.pdf

MMBTA55LT1 MMBTA55LT1

MMBTA55L Series,MMBTA56L Series,SMMBTA56L SeriesDriver TransistorsPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 318STYLE 6Compliant*COLLECTOR3MAXIMUM RATING

 0.2. Size:238K  first silicon
mmbta55lt1g.pdf

MMBTA55LT1 MMBTA55LT1

SEMICONDUCTORMMBTA55/56TECHNICAL DATADriver TransistorsPNP SiliconWe declare that the material of productcompliance with RoHS requirements.321MAXIMUM RATINGSValueSOT23Rating Symbol MMBTA55 MMBTA56 UnitCollectorEmitter Voltage VCEO 60 80 Vdc3CollectorBase Voltage V 60 80 VdcCBOCOLLECTOREmitterBase Voltage V 4.0 VdcEBO1Colle

 6.1. Size:77K  motorola
mmbta55l mmbta56.pdf

MMBTA55LT1 MMBTA55LT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA55LT1/DDriver TransistorsMMBTA55LT1COLLECTORPNP Silicon3MMBTA56LT1**Motorola Preferred Device1BASE2EMITTERMAXIMUM RATINGS3Rating Symbol MMBTA55 MMBTA56 Unit1CollectorEmitter Voltage VCEO 60 80 Vdc2CollectorBase Voltage VCBO 60 80 VdcEmitterBase Voltage VEBO 4.0 Vdc

 6.2. Size:69K  onsemi
mmbta55l mmbta56l.pdf

MMBTA55LT1 MMBTA55LT1

MMBTA55L Series,MMBTA56L Series,SMMBTA56L SeriesDriver TransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableSOT-23 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCASE 318STYLE 6CompliantCOLLECTOR3MAXIMUM RATINGSRat

 6.3. Size:148K  onsemi
mmbta55l mmbta56l smmbta56l.pdf

MMBTA55LT1 MMBTA55LT1

MMBTA55L Series,MMBTA56L Series,SMMBTA56L SeriesDriver TransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableSOT-23 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCASE 318STYLE 6CompliantCOLLECTOR3MAXIMUM RATINGSRat

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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