MMBTA63 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBTA63
Código: 2U_K2E
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.33 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 125 MHz
Ganancia de corriente contínua (hfe): 12000
Paquete / Cubierta: TO236
Búsqueda de reemplazo de transistor bipolar MMBTA63
MMBTA63 Datasheet (PDF)
mmbta63.pdf
MPSA63 MMBTA63 PZTA63CCEECBTO-92CBSOT-23BSOT-223EMark: 2UPNP Darlington TransistorThis device is designed for applications requiring extremely highcurrent gain at currents to 800 mA. Sourced from Process 61.See MPSA64 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage
mmbta63 mmbta64.pdf
SEMICONDUCTOR MMBTA63/64TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR.EL B LDIM MILLIMETERS_+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05MAXIMUM RATING (Ta=25 )E 2.40+0.30/-0.201G 1.90CHARACTERISTIC SYMBOL RATING UNITH 0.95J 0.13+0.10/-0.05Collector-Base VCBO -30 VMMBTA63/64 K 0.00 ~
mmbta63l mmbta64.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA63LT1/DDarlington TransistorsMMBTA63LT1PNP SiliconCOLLECTOR 3MMBTA64LT1**Motorola Preferred DeviceBASE1EMITTER 23MAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCES 30 VdcCollectorBase Voltage VCBO 30 VdcCASE 31808, STYLE 6EmitterBase Voltage VEBO 10
mmbta63lt1g mmbta64lt1g.pdf
MMBTA63LT1G,MMBTA64LT1G,SMMBTA64LT1GDarlington TransistorsPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 (TO-236) These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCASE 318Compliant*STYLE 6MAXIMUM RATINGSCOLLECTOR
mpsa64 mmbta64 pzta64.pdf
November 2011MPSA64 / MMBTA64 / PZTA64PNP Darlington TransistorFeatures This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61.MPSA64 MMBTA64 PZTA64CCEECBTO-92 SOT-23 SOT-223BMark:2VEBCAbsolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Value UnitsVCES Coll
mmbta64.pdf
MMBTA64TRANSISTOR(PNP)SOT23 FEATURES For Applications Requiring High Current Gain MARKING:2V 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR VCBO Collector-Base Voltage -30 V V Collector-Emitter Voltage -30 V CEOV Emitter-Base Voltage -10 V EBOI Collector Current -800 mA CP Collector Power
mmbta64.pdf
MMBTA64COLLECTORDarlington Transistor 33PNP Silicon 1 1BASE2SOT-232EMITTERMAXIMUM RATINGS (Ta=25 C)Rating Symbol ValueUnitVCollector-Emitter Voltage CES -30 VdcCollector-Base Voltage VCBO-30 VdcEmitter-Base Voltage VEBO-10 VdcICmAdcCollector Current-Continuous -500THERMAL CHARACTERISTICSCharacteristics Symbol ValueUnitTotal Device Dissipation
mmbta64.pdf
SEMICONDUCTORMMBTA64TECHNICAL DATADarlington TransistorsPNP SiliconWe declare that the material of product3compliance with RoHS requirements.2MAXIMUM RATINGS1Rating Symbol Value Unit SOT 23 CollectorEmitter Voltage VCES 30 VdcCollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 10 VdcCollector Current Continuous IC 500 mAdcDEVIC
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
