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MMBTA63LT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBTA63LT1
   Código: 2U
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.33 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 125 MHz
   Ganancia de corriente contínua (hfe): 12000
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar MMBTA63LT1

 

MMBTA63LT1 Datasheet (PDF)

 0.1. Size:486K  onsemi
mmbta63lt1g mmbta64lt1g.pdf

MMBTA63LT1
MMBTA63LT1

MMBTA63LT1G,MMBTA64LT1G,SMMBTA64LT1GDarlington TransistorsPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 (TO-236) These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCASE 318Compliant*STYLE 6MAXIMUM RATINGSCOLLECTOR

 6.1. Size:156K  motorola
mmbta63l mmbta64.pdf

MMBTA63LT1
MMBTA63LT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA63LT1/DDarlington TransistorsMMBTA63LT1PNP SiliconCOLLECTOR 3MMBTA64LT1**Motorola Preferred DeviceBASE1EMITTER 23MAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCES 30 VdcCollectorBase Voltage VCBO 30 VdcCASE 31808, STYLE 6EmitterBase Voltage VEBO 10

 7.1. Size:39K  fairchild semi
mmbta63.pdf

MMBTA63LT1
MMBTA63LT1

MPSA63 MMBTA63 PZTA63CCEECBTO-92CBSOT-23BSOT-223EMark: 2UPNP Darlington TransistorThis device is designed for applications requiring extremely highcurrent gain at currents to 800 mA. Sourced from Process 61.See MPSA64 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage

 7.2. Size:35K  kec
mmbta63 mmbta64.pdf

MMBTA63LT1
MMBTA63LT1

SEMICONDUCTOR MMBTA63/64TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR.EL B LDIM MILLIMETERS_+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05MAXIMUM RATING (Ta=25 )E 2.40+0.30/-0.201G 1.90CHARACTERISTIC SYMBOL RATING UNITH 0.95J 0.13+0.10/-0.05Collector-Base VCBO -30 VMMBTA63/64 K 0.00 ~

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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