MMBTA63LT1 Specs and Replacement

Type Designator: MMBTA63LT1

SMD Transistor Code: 2U

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.33 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 125 MHz

Forward Current Transfer Ratio (hFE), MIN: 12000

Noise Figure, dB: -

Package: SOT23

 MMBTA63LT1 Substitution

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MMBTA63LT1 datasheet

 0.1. Size:486K  onsemi

mmbta63lt1g mmbta64lt1g.pdf pdf_icon

MMBTA63LT1

MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G Darlington Transistors PNP Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT-23 (TO-236) These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 318 Compliant* STYLE 6 MAXIMUM RATINGS COLLECTOR... See More ⇒

 6.1. Size:156K  motorola

mmbta63l mmbta64.pdf pdf_icon

MMBTA63LT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA63LT1/D Darlington Transistors MMBTA63LT1 PNP Silicon COLLECTOR 3 MMBTA64LT1 * *Motorola Preferred Device BASE 1 EMITTER 2 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCES 30 Vdc Collector Base Voltage VCBO 30 Vdc CASE 318 08, STYLE 6 Emitter Base Voltage VEBO 10... See More ⇒

 7.1. Size:39K  fairchild semi

mmbta63.pdf pdf_icon

MMBTA63LT1

MPSA63 MMBTA63 PZTA63 C C E E C B TO-92 C B SOT-23 B SOT-223 E Mark 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage... See More ⇒

 7.2. Size:35K  kec

mmbta63 mmbta64.pdf pdf_icon

MMBTA63LT1

SEMICONDUCTOR MMBTA63/64 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. E L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 MAXIMUM RATING (Ta=25 ) E 2.40+0.30/-0.20 1 G 1.90 CHARACTERISTIC SYMBOL RATING UNIT H 0.95 J 0.13+0.10/-0.05 Collector-Base VCBO -30 V MMBTA63/64 K 0.00 ... See More ⇒

Detailed specifications: MMBTA42LT1, MMBTA43, MMBTA43LT1, MMBTA55, MMBTA55LT1, MMBTA56, MMBTA56LT1, MMBTA63, S9014, MMBTA64, MMBTA64LT1, MMBTA70, MMBTA70LT1, MMBTA92, MMBTA92LT1, MMBTA93, MMBTA93LT1

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