MMBTH10 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MPSH10 MMBTH10CEC TO-92EBBSOT-23Mark: 3ENPN RF TransistorThis device is designed for use in low noise UHF/VHF amplifiers,with collector currents in the 100 A to 20 mA range in commonemitter or common base mode of operations, and in low frequencydrift, high output UHF oscillators. Sourced from Process 42.Absolute Maximum Ratings* TA = 25C unless otherwise notedS

MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR Please click here to visit our online spice models database. Features Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators SOT-23 C High Current Gain Bandwidth Product Dim Min Max Ideal for Mixer and RF Amplifier Applications with A 0.37 0.51 collector currents in the 100A - 30 mA Range B

UNISONIC TECHNOLOGIES CO., LTD MMBTH10 NPN SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MMBTH10 is designed for using as VHF and UHFoscillators and VHF Mixer in a tuner of a TV receiver. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 MMBTH10L-x-AE3-R MMBTH10G-x-AE3-R SOT-23 E B C Tape ReelMMBTH10L-x-AL3-

MMBTH10 50 mA, 30 V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free SOT-23 DESCRIPTION The MMBTH10 is designed for use in VHF & UHF oscillators Aand VHF mixer in tuner of a TV receiver. L33Top View C BCollectorFEATURES 13 1 22VHF/UHF Transistor K E1 DBasePACKAG

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBTH10 TRANSISTOR (NPN) SOT23 FEATURES VHF/UHF Transistor MARKING: 3EM 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage 30 V CBOV Collector-Emitter Voltage 25 V CEOV Emitter

MMBTH1 0TRANSISTOR(NPN)SOT23 FEATURES VHF/UHF Transistor MARKING: 3EM 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage 30 V CBOV Collector-Emitter Voltage 25 V CEOV Emitter-Base Voltage 3 V EBOIC Collector Current 50 mA PC Collector Power Dissipation 225 mW R Therm

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.MMBTH10MAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collect

MMBTH10COLLECTORNPN 1.1 GHz RF Transistor3P b Lead(Pb)-Free1BASE2FEATURESSOT-23 Designed for VHF/UHF Amplifier ApplicationsEMITTERand High Output VHF oscillators. High Current Gain Bandwidth product. Ideal for Mixer and RF Amplifier Application with Collector Current in the100mA~20mA Range in Common emitter or Common base mode of operations.(Ta=25 C)MAXIMUM RA

SMD Type TransistorsNPN TransistorsMMBTH10 (KMBTH10)SOT-23Unit: mm Features +0.12.9 -0.1+0.10.4 -0.1 Collector Current Capability IC=0.05A3 Collector Emitter Voltage VCEO=25V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 3

RUMW UMW MMBTH10SOT-23 Plastic-Encapsulate TransistorsMMBTH10 TRANSISTOR (NPN) SOT-23 FEATURES VHF/UHF Transistor 1. BASE MARKING: 3EM 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 30 V CBOV Collector-Emitter Voltage 25 V CEOV Emitter-Base Voltage 3 V EBOIC Collector Curr

MMBTH10 Silicon Epitaxial Planar Transistor FEATURES High transition frequency. Power dissipation. (P =350mW) CAPPLICATIONS VHF/UHF Transistor SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage V 30 V CBO Collector-Emitter Voltage V 25 V CEO Emitter-Base Voltage V 3 V EBO Collector

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD. MMBTH10 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO Vdc 3.0

MMBTH10BIPOLAR TRANSISTOR (NPN)FEATURES VHF/UHF Transistor Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitVCollector-Base Voltage CBO 30 VVCEOColle

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTH10LT1/DMMBTH10LT1VHF/UHF TransistorCOLLECTORNPN Silicon Motorola Preferred Device31BASE321EMITTER2CASE 318-08, STYLE 6SOT-23 (TO-236AB)MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage VCEO 25 VdcCollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 3.0 VdcDEVI

MMBTH10RGNPN RF TransistorC This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators.E Sourced from process 42.SOT-23BMark: 3E1. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings* Ta=25C un

MMBTH10LT1G,NSVMMBTH10LT1G,MMBTH10LT3G,MMBTH10-4LT1GVHF/UHF Transistorhttp://onsemi.comNPN SiliconFeatures AEC-Q101 Qualified and PPAP CapableSOT-23 (TO-236) NSV Prefix for Automotive and Other Applications RequiringCASE 318Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant*

MMBTH10LT1G,NSVMMBTH10LT1G,MMBTH10LT3G,MMBTH10-4LT1GVHF/UHF Transistorhttp://onsemi.comNPN SiliconFeatures AEC-Q101 Qualified and PPAP CapableSOT-23 (TO-236) NSV Prefix for Automotive and Other Applications RequiringCASE 318Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant*

MMBTH10M3T5GNPN VHF/UHF TransistorThe MMBTH10M3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeVHF/UHF applications and is housed in the SOT-723 surface mountpackage. This device is ideal for low-power surface mountapplications where board space is at a premium.http://onsemi.comFeatures Reduces Board SpaceCOLLECTOR

MMBTH10L,MMBTH10-4L,SMMBTH10-4L,NSVMMBTH10LVHF/UHF Transistorwww.onsemi.comNPN SiliconFeatures S and NSV Prefixes for Automotive and Other ApplicationsSOT-23 (TO-236)Requiring Unique Site and Control Change Requirements;CASE 318AEC-Q101 Qualified and PPAP CapableSTYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31M

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MMBTH10M3T5GNPN VHF/UHF TransistorThe MMBTH10M3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeVHF/UHF applications and is housed in the SOT-723 surface mountpackage. This device is ideal for low-power surface mountapplications where board space is at a premium.http://onsemi.comFeatures Reduces Board SpaceCOLLECTOR

MMBTH10L,MMBTH10-4L,SMMBTH10-4L,NSVMMBTH10LVHF/UHF Transistorwww.onsemi.comNPN SiliconFeatures S and NSV Prefixes for Automotive and Other ApplicationsSOT-23 (TO-236)Requiring Unique Site and Control Change Requirements;CASE 318AEC-Q101 Qualified and PPAP CapableSTYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31M

MMBTH10M3T5GNPN VHF/UHF TransistorThe MMBTH10M3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeVHF/UHF applications and is housed in the SOT-723 surface mountpackage. This device is ideal for low-power surface mountapplications where board space is at a premium.http://onsemi.comFeatures Reduces Board SpaceCOLLECTOR

MMBTH10LT1G,NSVMMBTH10LT1G,MMBTH10LT3G,MMBTH10-4LT1GVHF/UHF Transistorhttp://onsemi.comNPN SiliconFeatures AEC-Q101 Qualified and PPAP CapableSOT-23 (TO-236) NSV Prefix for Automotive and Other Applications RequiringCASE 318Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant*

MMBTH10LT1G,MMBTH10-4LT1GVHF/UHF TransistorNPN SiliconFeatureshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31MAXIMUM RATINGSBASERating Symbol Value Unit2Collector-Emitter Voltage VCEO 25 VdcEMITTERCollector-Base Voltage VCBO 30 VdcEmitter-Base Voltage VEBO 3.0 Vdc3THERMAL CHARACTERISTICS1Character

MMBTH10WVHF/UHF TransistorsCOLLECTOR33P b Lead(Pb)-Free112BASEFEATURES:2EMITTERSOT-323(SC-70)* We declare that the material of product compliance with RoHS requirements.Maximum Ratings (T =25C Unlesso therwise noted)ARating SymbolValue UnitVCEOCollector-Emitter Voltage 25 V30Collector-Base Voltage V VCBO3.0Emitter-Base Voltage VVEBOCol

FM120-M WILLASTHRUMMBTH10LT1VHF/UHF TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.compliance with RoHS requirements.We declare that the material of product SOD-123H

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTH10LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM: 0.225 W (Tamb=25) 1. 3 Collector current ICM: 0.05 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range Unit: mm TJ,

SEMICONDUCTORMMBTH10QTECHNICAL DATAVHF/UHF TransistorsWe declare that the material of product compliance with RoHS requirements.Ordering InformationDevice Marking Shipping3000/Tape&Reel MMBTH10Q 3EQ3MAXIMUM RATINGS2Rating Symbol Value Unit1CollectorEmitter Voltage V CEO 25 V SOT23CollectorBase Voltage V CBO 30 VEmitterBase Voltage V EBO 3.0 VCOLLE

MMBTH10MMBTH10MMBTH10MMBTH10MMBTH10 TRANSISTOR(NPN)SOT-23 FEATURES VHF/UHF Transistor1BASE 2EMITTER 3COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) SymbolParameter ValueUnitVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 3 VIC Collector Current 50mAPC Collector Power Dissipation 225m