MMBTH10 - описание и поиск аналогов

 ..1. Size:738K  fairchild semi
 mmbth10 mpsh10.pdf 

MPSH10 MMBTH10 C E C TO-92 E B B SOT-23 Mark 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42. Absolute Maximum Ratings* TA = 25 C unless otherwise noted S

 ..2. Size:551K  diodes
 mmbth10.pdf 

MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR Please click here to visit our online spice models database. Features Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators SOT-23 C High Current Gain Bandwidth Product Dim Min Max Ideal for Mixer and RF Amplifier Applications with A 0.37 0.51 collector currents in the 100 A - 30 mA Range B

 ..3. Size:230K  utc
 mmbth10.pdf 

UNISONIC TECHNOLOGIES CO., LTD MMBTH10 NPN SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MMBTH10 is designed for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 MMBTH10L-x-AE3-R MMBTH10G-x-AE3-R SOT-23 E B C Tape Reel MMBTH10L-x-AL3-

 ..4. Size:311K  secos
 mmbth10.pdf 

MMBTH10 50 mA, 30 V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free SOT-23 DESCRIPTION The MMBTH10 is designed for use in VHF & UHF oscillators A and VHF mixer in tuner of a TV receiver. L 3 3 Top View C B Collector FEATURES 1 3 1 2 2 VHF/UHF Transistor K E 1 D Base PACKAG

 ..5. Size:1014K  jiangsu
 mmbth10.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBTH10 TRANSISTOR (NPN) SOT 23 FEATURES VHF/UHF Transistor MARKING 3EM 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter

 ..6. Size:296K  htsemi
 mmbth10.pdf 

MMBTH1 0 TRANSISTOR(NPN) SOT 23 FEATURES VHF/UHF Transistor MARKING 3EM 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 3 V EBO IC Collector Current 50 mA PC Collector Power Dissipation 225 mW R Therm

 ..7. Size:288K  gsme
 mmbth10.pdf 

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. MMBTH10 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collect

 ..8. Size:154K  wietron
 mmbth10.pdf 

MMBTH10 COLLECTOR NPN 1.1 GHz RF Transistor 3 P b Lead(Pb)-Free 1 BASE 2 FEATURES SOT-23 Designed for VHF/UHF Amplifier Applications EMITTER and High Output VHF oscillators. High Current Gain Bandwidth product. Ideal for Mixer and RF Amplifier Application with Collector Current in the 100mA 20mA Range in Common emitter or Common base mode of operations. (Ta=25 C) MAXIMUM RA

 ..9. Size:1141K  kexin
 mmbth10.pdf 

SMD Type Transistors NPN Transistors MMBTH10 (KMBTH10) SOT-23 Unit mm Features +0.1 2.9 -0.1 +0.1 0.4 -0.1 Collector Current Capability IC=0.05A 3 Collector Emitter Voltage VCEO=25V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 3

 ..10. Size:838K  umw-ic
 mmbth10.pdf 

R UMW UMW MMBTH10 SOT-23 Plastic-Encapsulate Transistors MMBTH10 TRANSISTOR (NPN) SOT-23 FEATURES VHF/UHF Transistor 1. BASE MARKING 3EM 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 3 V EBO IC Collector Curr

 ..11. Size:806K  jsmsemi
 mmbth10.pdf 

MMBTH10 Silicon Epitaxial Planar Transistor FEATURES High transition frequency. Power dissipation. (P =350mW) C APPLICATIONS VHF/UHF Transistor SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage V 30 V CBO Collector-Emitter Voltage V 25 V CEO Emitter-Base Voltage V 3 V EBO Collector

 ..12. Size:129K  cn fosan
 mmbth10.pdf 

 ..13. Size:827K  cn hottech
 mmbth10.pdf 

MMBTH10 BIPOLAR TRANSISTOR (NPN) FEATURES VHF/UHF Transistor Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit V Collector-Base Voltage CBO 30 V V CEO Colle

 0.1. Size:88K  motorola
 mmbth10lt1rev0d.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTH10LT1/D MMBTH10LT1 VHF/UHF Transistor COLLECTOR NPN Silicon Motorola Preferred Device 3 1 BASE 3 2 1 EMITTER 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 25 Vdc Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 3.0 Vdc DEVI

 0.2. Size:45K  fairchild semi
 mmbth10rg.pdf 

MMBTH10RG NPN RF Transistor C This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. E Sourced from process 42. SOT-23 B Mark 3E 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25 C un

 0.3. Size:102K  onsemi
 mmbth10lt1g.pdf 

MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http //onsemi.com NPN Silicon Features AEC-Q101 Qualified and PPAP Capable SOT-23 (TO-236) NSV Prefix for Automotive and Other Applications Requiring CASE 318 Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant*

 0.4. Size:102K  onsemi
 mmbth10-4lt1g.pdf 

MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http //onsemi.com NPN Silicon Features AEC-Q101 Qualified and PPAP Capable SOT-23 (TO-236) NSV Prefix for Automotive and Other Applications Requiring CASE 318 Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant*

 0.5. Size:181K  onsemi
 mmbth10m3t5g.pdf 

MMBTH10M3T5G NPN VHF/UHF Transistor The MMBTH10M3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose VHF/UHF applications and is housed in the SOT-723 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. http //onsemi.com Features Reduces Board Space COLLECTOR

 0.6. Size:151K  onsemi
 mmbth10lt1g mmbth10-04lt1g nsvmmbth10lt1g.pdf 

MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor www.onsemi.com NPN Silicon Features S and NSV Prefixes for Automotive and Other Applications SOT-23 (TO-236) Requiring Unique Site and Control Change Requirements; CASE 318 AEC-Q101 Qualified and PPAP Capable STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 M

 0.7. Size:204K  onsemi
 mmbth10lt1g nsvmmbth10lt1g mmbth10-04lt1g.pdf 

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 0.8. Size:119K  onsemi
 mmbth10m3-d.pdf 

MMBTH10M3T5G NPN VHF/UHF Transistor The MMBTH10M3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose VHF/UHF applications and is housed in the SOT-723 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. http //onsemi.com Features Reduces Board Space COLLECTOR

 0.9. Size:91K  onsemi
 mmbth10l mmbth10-4l smmbth10-4l nsvmmbth10l.pdf 

MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor www.onsemi.com NPN Silicon Features S and NSV Prefixes for Automotive and Other Applications SOT-23 (TO-236) Requiring Unique Site and Control Change Requirements; CASE 318 AEC-Q101 Qualified and PPAP Capable STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 M

 0.10. Size:120K  onsemi
 mmbth10m3.pdf 

MMBTH10M3T5G NPN VHF/UHF Transistor The MMBTH10M3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose VHF/UHF applications and is housed in the SOT-723 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. http //onsemi.com Features Reduces Board Space COLLECTOR

 0.11. Size:102K  onsemi
 nsvmmbth10lt1g.pdf 

MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http //onsemi.com NPN Silicon Features AEC-Q101 Qualified and PPAP Capable SOT-23 (TO-236) NSV Prefix for Automotive and Other Applications Requiring CASE 318 Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant*

 0.12. Size:123K  onsemi
 mmbth10lt1 mmbth10-4lt1.pdf 

MMBTH10LT1G, MMBTH10-4LT1G VHF/UHF Transistor NPN Silicon Features http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit 2 Collector-Emitter Voltage VCEO 25 Vdc EMITTER Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc 3 THERMAL CHARACTERISTICS 1 Character

 0.13. Size:2102K  wietron
 mmbth10w.pdf 

MMBTH10W VHF/UHF Transistors COLLECTOR 3 3 P b Lead(Pb)-Free 1 1 2 BASE FEATURES 2 EMITTER SOT-323(SC-70) * We declare that the material of product compliance with RoHS requirements. Maximum Ratings (T =25 C Unlesso therwise noted) A Rating Symbol Value Unit VCEO Collector-Emitter Voltage 25 V 30 Collector-Base Voltage V V CBO 3.0 Emitter-Base Voltage V V EBO Col

 0.14. Size:445K  willas
 mmbth10lt1.pdf 

FM120-M WILLAS THRU MMBTH10LT1 VHF/UHF Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. compliance with RoHS requirements. We declare that the material of product SOD-123H

 0.15. Size:1201K  shenzhen
 mmbth10lt1.pdf 

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTH10LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM 0.225 W (Tamb=25 ) 1. 3 Collector current ICM 0.05 A Collector-base voltage V(BR)CBO 30 V Operating and storage junction temperature range Unit mm TJ,

 0.16. Size:239K  first silicon
 mmbth10q.pdf 

SEMICONDUCTOR MMBTH10Q TECHNICAL DATA VHF/UHF Transistors We declare that the material of product compliance with RoHS requirements. Ordering Information Device Marking Shipping 3000/Tape&Reel MMBTH10Q 3EQ 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit 1 Collector Emitter Voltage V CEO 25 V SOT 23 Collector Base Voltage V CBO 30 V Emitter Base Voltage V EBO 3.0 V COLLE

 0.17. Size:3748K  cn twgmc
 mmbth10a mmbth10b mmbth10c.pdf 

MMBTH10 MMBTH10 MMBTH10 MMBTH10 MMBTH10 TRANSISTOR(NPN) SOT-23 FEATURES VHF/UHF Transistor 1 BASE 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 3 V IC Collector Current 50 mA PC Collector Power Dissipation 225 m