MN29 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MN29
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 45 W
Tensión colector-base (Vcb): 40 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar MN29
MN29 Datasheet (PDF)
dmn2990udj.pdf
DMN2990UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Dual N-Channel MOSFET ID Max V(BR)DSS RDS(ON) Max Low On-Resistance TA = 25C Very Low Gate Threshold Voltage, 1.0V Max 0.99 @ VGS = 4.5V 450mA Low Input Capacitance 1.2 @ VGS = 2.5V 400mA Fast Switching Speed 20V 1.8 @ VGS = 1.8V 330mA Ultra-Small Surface
dmn2990ufa.pdf
DMN2990UFA20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.4mm Maximum Package height ID max V(BR)DSS RDS(ON) max TA = +25C 0.48mm2 package footprint, 16 times smaller than SOT23 Low On-Resistance0.99 @ VGS = 4.5V 510mA Very low Gate Threshold Voltage, 1.0V max 1.2 @ VGS = 2.5V 470mA 20V ESD Pr
dmn2990ufz.pdf
DMN2990UFZ20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.42mm Maximum Package Height ID max V(BR)DSS RDS(ON) max TA = +25C 0.62mm x 0.62mm Package Footprint Low On-Resistance0.99 @ VGS = 4.5V 250mA Very Low Gate Threshold Voltage, 1.0V Max 1.2 @ VGS = 2.5V 230mA 20V ESD Protected Gate1.8
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
