MN29 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MN29
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 45 W
Tensión colector-base (Vcb): 40 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 30
Encapsulados: TO3
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MN29 datasheet
dmn2990udj.pdf
DMN2990UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Dual N-Channel MOSFET ID Max V(BR)DSS RDS(ON) Max Low On-Resistance TA = 25 C Very Low Gate Threshold Voltage, 1.0V Max 0.99 @ VGS = 4.5V 450mA Low Input Capacitance 1.2 @ VGS = 2.5V 400mA Fast Switching Speed 20V 1.8 @ VGS = 1.8V 330mA Ultra-Small Surface
dmn2990ufa.pdf
DMN2990UFA 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.4mm Maximum Package height ID max V(BR)DSS RDS(ON) max TA = +25 C 0.48mm2 package footprint, 16 times smaller than SOT23 Low On-Resistance 0.99 @ VGS = 4.5V 510mA Very low Gate Threshold Voltage, 1.0V max 1.2 @ VGS = 2.5V 470mA 20V ESD Pr
dmn2990ufz.pdf
DMN2990UFZ 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.42mm Maximum Package Height ID max V(BR)DSS RDS(ON) max TA = +25 C 0.62mm x 0.62mm Package Footprint Low On-Resistance 0.99 @ VGS = 4.5V 250mA Very Low Gate Threshold Voltage, 1.0V Max 1.2 @ VGS = 2.5V 230mA 20V ESD Protected Gate 1.8
sjmn290r60zd.pdf
SJMN290R60ZD Super Junction MOSFET 600V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g D Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G S Ordering Information TO-252 Part Number Marking Package SJMN290R60ZD SJMN290R60Z TO-252 Marking Information SJMN Column
Otros transistores... MN13B, MN13C, MN19, MN21, MN24, MN25, MN26, MN28, BD335, MN32, MN48, MN49, MO810, MO816, MO818, MO870, MP10
History: MN24 | MN26
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