Биполярный транзистор MN29 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MN29
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 45 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 85 °C
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: TO3
MN29 Datasheet (PDF)
dmn2990udj.pdf
DMN2990UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Dual N-Channel MOSFET ID Max V(BR)DSS RDS(ON) Max Low On-Resistance TA = 25C Very Low Gate Threshold Voltage, 1.0V Max 0.99 @ VGS = 4.5V 450mA Low Input Capacitance 1.2 @ VGS = 2.5V 400mA Fast Switching Speed 20V 1.8 @ VGS = 1.8V 330mA Ultra-Small Surface
dmn2990ufa.pdf
DMN2990UFA20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.4mm Maximum Package height ID max V(BR)DSS RDS(ON) max TA = +25C 0.48mm2 package footprint, 16 times smaller than SOT23 Low On-Resistance0.99 @ VGS = 4.5V 510mA Very low Gate Threshold Voltage, 1.0V max 1.2 @ VGS = 2.5V 470mA 20V ESD Pr
dmn2990ufz.pdf
DMN2990UFZ20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.42mm Maximum Package Height ID max V(BR)DSS RDS(ON) max TA = +25C 0.62mm x 0.62mm Package Footprint Low On-Resistance0.99 @ VGS = 4.5V 250mA Very Low Gate Threshold Voltage, 1.0V Max 1.2 @ VGS = 2.5V 230mA 20V ESD Protected Gate1.8
sjmn290r60zd.pdf
SJMN290R60ZD Super Junction MOSFET 600V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) gD Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G S Ordering Information TO-252 Part Number Marking Package SJMN290R60ZD SJMN290R60Z TO-252 Marking Information SJMN Column
sjmn290r60zf.pdf
SJMN290R60ZF Super Junction MOSFET 600V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G D S Ordering Information Part Number Marking Package TO-220F-3L SJMN290R60ZF N290R60Z TO-220F-3L Marking Information Column 1: Ma
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050