MN48 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PMN48XPA20 V, P-channel Trench MOSFET17 May 2019 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching AEC-Q101 qualified3. A

PMN48XP20 V, 4.1 A P-channel Trench MOSFETRev. 1 21 April 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low RDSon Trench MOSFET technology Very fast switching1.

DMN4800LSSLN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefitss 14m @ VGS = 10V ID max V(BR)DSS RDS(on) Low Input Capacitance TA = +25C Fast Switching Speed Low Input/Output Leakage 14m @ VGS = 10V 8.0A 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20m @ VGS = 4.5V 6.7A Halogen and Antimony Free. Gr

DMN4800LSSN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: SOP-8L 14m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 20m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D Lo

DMN4800LSSQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max Low Input Capacitance BVDSS RDS(ON) max TA = +25C Fast Switching Speed 14m @ VGS = 10V 8.6A Low Input/Output Leakage 30V 20m @ VGS = 4.5V 7.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Devi

MMN4818Data SheetM-MOS Semiconductor Hong Kong Limited30V Dual N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@8.5A = 19mRDS(ON), Vgs@4.5V, Ids@6A = 28mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramDrain 1 Drain 2 Gate 2 Gate 1 Source 2