MN48 Todos los transistores

 0.1. Size:261K  nxp
 pmn48xpa.pdf

PMN48XPA 20 V, P-channel Trench MOSFET 17 May 2019 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching AEC-Q101 qualified 3. A

 0.2. Size:1109K  nxp
 pmn48xp.pdf

PMN48XP 20 V, 4.1 A P-channel Trench MOSFET Rev. 1 21 April 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low RDSon Trench MOSFET technology Very fast switching 1.

 0.3. Size:217K  diodes
 dmn4800lssl.pdf

DMN4800LSSL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefitss 14m @ VGS = 10V ID max V(BR)DSS RDS(on) Low Input Capacitance TA = +25 C Fast Switching Speed Low Input/Output Leakage 14m @ VGS = 10V 8.0A 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20m @ VGS = 4.5V 6.7A Halogen and Antimony Free. Gr

 0.4. Size:160K  diodes
 dmn4800lss.pdf

DMN4800LSS N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOP-8L 14m @ VGS = 10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 20m @ VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-020D Lo

 0.5. Size:326K  diodes
 dmn4800lssq.pdf

DMN4800LSSQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max Low Input Capacitance BVDSS RDS(ON) max TA = +25 C Fast Switching Speed 14m @ VGS = 10V 8.6A Low Input/Output Leakage 30V 20m @ VGS = 4.5V 7.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Devi

 0.6. Size:196K  m-mos
 mmn4818.pdf

MMN4818 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V Dual N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@8.5A = 19m RDS(ON), Vgs@4.5V, Ids@6A = 28m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM SOP-08 Internal Schematic Diagram Drain 1 Drain 2 Gate 2 Gate 1 Source 2