Справочник транзисторов. MN48

 

Биполярный транзистор MN48 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MN48
   Тип материала: Ge
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 63 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 85 °C
   Статический коэффициент передачи тока (hfe): 75
   Корпус транзистора: TO3

 Аналоги (замена) для MN48

 

 

MN48 Datasheet (PDF)

 0.1. Size:261K  nxp
pmn48xpa.pdf

MN48
MN48

PMN48XPA20 V, P-channel Trench MOSFET17 May 2019 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching AEC-Q101 qualified3. A

 0.2. Size:1109K  nxp
pmn48xp.pdf

MN48
MN48

PMN48XP20 V, 4.1 A P-channel Trench MOSFETRev. 1 21 April 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low RDSon Trench MOSFET technology Very fast switching1.

 0.3. Size:217K  diodes
dmn4800lssl.pdf

MN48
MN48

DMN4800LSSLN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefitss 14m @ VGS = 10V ID max V(BR)DSS RDS(on) Low Input Capacitance TA = +25C Fast Switching Speed Low Input/Output Leakage 14m @ VGS = 10V 8.0A 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20m @ VGS = 4.5V 6.7A Halogen and Antimony Free. Gr

 0.4. Size:160K  diodes
dmn4800lss.pdf

MN48
MN48

DMN4800LSSN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: SOP-8L 14m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 20m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D Lo

 0.5. Size:326K  diodes
dmn4800lssq.pdf

MN48
MN48

DMN4800LSSQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max Low Input Capacitance BVDSS RDS(ON) max TA = +25C Fast Switching Speed 14m @ VGS = 10V 8.6A Low Input/Output Leakage 30V 20m @ VGS = 4.5V 7.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Devi

 0.6. Size:196K  m-mos
mmn4818.pdf

MN48
MN48

MMN4818Data SheetM-MOS Semiconductor Hong Kong Limited30V Dual N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@8.5A = 19mRDS(ON), Vgs@4.5V, Ids@6A = 28mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramDrain 1 Drain 2 Gate 2 Gate 1 Source 2

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