MP10 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CMP100N04/CMB100N04/CMI100N04N-Ch 40V Fast Switching MOSFETsGeneral Description Product SummeryThe100N04 is N-ch MOSFETs BVDSS RDSON ID with extreme high cell density ,40V

DMP10H400SK3 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(on) max TC = +25C Low Input Capacitance 240m @ VGS = -10V -9A -100V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -8A 300m @ VGS = -4.5V Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards

ZXMP10A18K100V DPAK P-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.150 @ VGS= -10V -5.9-1000.190 @ VGS= -6V -5.2DescriptionDThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastGswitching, making it ideal for high efficiency power managementapplications.FeaturesS Low on

DMP1055UFDBDUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID MAX V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C Low Profile, 0.6mm Max Height 59m @ VGS = -4.5V -3.9A ESD protected gate. -12V 81m @ VGS = -2.5V -3.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 115m @ VGS = -1.8V -2.8A

A Product Line ofDiodes IncorporatedZXMP10A13F100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Fast Switching Speed Max ID BVDSS Max RDS(ON) Package TA = +25C Low Input Capacitance Note 5 Low Gate Charge Low Threshold 1.0 @ VGS= -10V -0.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -100V SOT23 Halogen and Antim

DMP1005UFDF P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID Max BVDSS RDS(ON) Max PCB Footprint of 4mm2 TC = +25C 8.5m @ VGS = -4.5V -26A Low Gate Threshold Voltage -12V -22A 12m @ VGS = -2.5V Low On-Resistance ESD Protected up to 8kV Totally Lead-Free &

DMP10H4D2S 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage ID Low Input Capacitance BVDSS RDS(ON) TA = +25C Fast Switching Speed 4.2 @ VGS = -10V -0.27A Small Surface Mount Package -100V 5.0 @ VGS = -4.0V -0.24A ESD Protected up to 2KV (HBM) Totally Lead-Free & Fully RoHS Compliant

DMP1045UFY4P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID Low Input Capacitance V(BR)DSS RDS(on) max TA = 25C Fast Switching Speed 32m@ VGS = -4.5V -5.5A Low Input/Output Leakage -12V 45m@ VGS = -2.5V -4.5A ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 75m@ VGS = -1.8V -3.2A

ZXMP10A18G100V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = - 100V : RDS(on) = 0.150 ; ID = - 3.7ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT223 Low on-r

DMP1022UFDF 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID max 0.6mm profile ideal for low profile applications V(BR)DSS RDS(ON) max TA = +25C PCB footprint of 4mm2 Low Gate Threshold Voltage 14.8m @ VGS = -4.5V -9.5A Fast Switching Speed 19m @ VGS = -2.5V -8.5A -12V ESD Protected Gate 26m @ VGS = -1.8V -7.2A To

ZXMP10A16K100V DPAK P-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.235 @ VGS= -10V 4.6-1000.285 @ VGS= -6V 4.2DescriptionDThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastGswitching, making it ideal for high efficiency power managementapplications.FeaturesS Low on-

ZXMP10A13FQ 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast Switching Speed Max ID BVDSS Max RDS(ON) Low Input Capacitance TA = +25C Low Gate Charge 1.0 @ VGS= -10V -0.7A Low Threshold -100V 1.45 @ VGS= -6.0V -0.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

ZXMP10A13F100V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = - 100V : RDS(on)= 1 ; ID = - 0.7ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resista

A Product Line ofDiodes IncorporatedZXMP10A17E6100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 350m @ VGS= -10V -1.6 Qualified to AEC-Q101 Standards for High Reliability -1

DMP1009UFDF 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm Profile Ideal for Low Profile Applications ID max BVDSS RDS(ON) max PCB Footprint of 4mm2 TA = +25C Low On-Resistance 11m @ VGS = -4.5V -11A Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 14m @ VGS = -3.7V -9.7A -12V Halo

DMP1012UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25C) Features LD-MOS Technology with the Lowest Figure of Merit: VDSS RDS(on) Qg Qgd ID RDS(on) = 8.2m to Minimize On-State Losses -8V 8.2m 8.1nC 1.8nC -10A Qg = 8.1nC for Ultra-Fast Switching Vgs(th) = -0.8V typ. for a Low Turn-On Potential CSP with Footprint 1.5mm 1.

` DMP1096UCB4P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Qg & Qgd ID V(BR)DSS RDS(ON) Small FootprintTA = 25C Low Profile 0.62mm height 102m @ VGS = -4.5V -2.6A -12V ESD Protected Up To 3KV 116m @ VGS = -2.5V -2.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

A Product Line ofDiodes IncorporatedZXMP10A17G100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 350m @ VGS= -10V -2.4 Qualified to AEC-Q101 Standards for High Reliability -10

A Product Line ofDiodes IncorporatedZXMP10A18G100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID max Fast switching speed V(BR)DSS RDS(on) max TA = 25C Green component. Lead Free Finish / RoHS compliant (Notes 3) (Note 1) 150m @ VGS = -10V -3.7A Qualified to AEC-Q101 Standards for High Reliability

DMP1080UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25C) Features LD-MOS Technology with the Lowest Figure of Merit: VDSS RDS(on) Qg Qgd ID RDS(on) = 65m to Minimize On-State Losses -12V 65m 2.5nC 0.6nC -3.3A Qg = 2.5nC for Ultra-Fast Switching Vgs(th) = -0.6V typ. for a Low Turn-On Potential Description CSP with Footprin

DMP1011UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25C) Features LD-MOS Technology with the Lowest Figure of Merit: VDSS RDS(on) Qg Qgd ID RDS(on) = 8.2m to Minimize On-State Losses -8V 8.2m 8.1nC 1.8nC -10A Qg = 8.1nC for Ultra-Fast Switching Vgs(th) = -0.8V typ. for a Low Turn-On Potential CSP with Footprint 1.5mm 1.5

DMP1045U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID BVDSS RDS(ON) Max TA = +25C Low Input Capacitance Fast Switching Speed 31m @ VGS = -4.5V 5.2A -12V Low Input/Output Leakage 45m @ VGS =-2.5V 4.3A ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Ha

DMP10H400SE 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Gate Drive BVDSS RDS(ON) Max TA = +25C Low Input Capacitance Fast Switching Speed 250m @ VGS = -10V -2.3A -100V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 300m @ VGS = -4.5V -2.1A Halogen and Antimony Free. Green Device (Note 3)

DMP1022UFDE12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm profile ideal for low profile applications ID max V(BR)DSS RDS(ON) max PCB footprint of 4mm2 TA = 25C Low Gate Threshold Voltage Fast Switching Speed 16m @ VGS = -4.5V -9.1A ESD Protected to 3KV 21.5m @ VGS = -2.5V -7.9A Totally Lead-Free & Fully RoHS Comp

DMP1055USW P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) max TA = +25C Low Gate Threshold Voltage -3.8A 48m @ VGS = -4.5V Low Input Capacitance -12V -3.4A 59m @ VGS = -2.5V Fast Switching Speed 80m @ VGS = -1.8V -2.9A Small Surface Mount Package ESD Protected Description

DMP1046UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX Device V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance Low Profile, 0.6mm Max Height 61m @ VGS = -4.5V -3.8A P-Channel -12V 81m @ VGS = -2.5V -3.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 115m @ VGS = -1.8V -2.8A Halogen and

DMP1018UCB9P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features LD-MOS technology with the lowest Figure of Merit: VDSS RDS(on) Qg Qgd ID RDS(on) = 12m to Minimize On-State Losses -12V 12m 4.9nC 1.1nC -7.6AQg = 4.9nC for Ultra-Fast Switching Vgs(th) = -0.8V typ. for a Low Turn-On Potential Typ. @ VGS = -4.5V, TA = +25C CSP with Footprint 1.5mm 1.5

ZXMP10A17E6Q 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed V(BR)DSS RDS(ON) TA = +25C Low Gate Drive 350m @ VGS= -10V -1.6A Low Input Capacitance -100V 450m @ VGS= -6.0V -1.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)

A Product Line ofDiodes IncorporatedZXMP10A17K 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 350m @ VGS= -10V -3.9A Qualified to AEC-Q101 Standards for High Reliability -1

DMP10H400SEQ 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Gate Drive BVDSS RDS(ON) Max TA = +25C Low Input Capacitance Fast Switching Speed 250m @ VGS = -10V -2.3A -100V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 300m @ VGS = -4.5V -2.1A Halogen and Antimony Free. Green Device (Note 3)

ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed V(BR)DSS RDS(on) TA = +25C Low Gate Drive 350m @ VGS= -10V -1.6A Low Input Capacitance -100V 450m @ VGS= -6V -1.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Q

FMP10N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

N N- CHANNEL MOSFET RMP10N50EI MAIN CHARACTERISTICS Package ID 10 A VDSS 500 V Rdson-max@Vgs=10V 0.70 Qg-typ 34.38nC APPLICATIONS High efficiency switch mode power supplies - Electronic lamp ballasts UPS based on half bridge

N R N-CHANNEL MOSFET MP10N60EI Package MAIN CHARACTERISTICS ID 10A VDSS 600V Rdson-max 0.66 Vgs=10V Qg-Typ 35nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE

Product specification DMP1045UP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID Low Input Capacitance V(BR)DSS RDS(on) maxTA = 25C Fast Switching Speed Low Input/Output Leakage 31m@ VGS = -4.5V 5.2A Lead Free By Design/RoHS Compliant (Note 1) -12V 4.3A 45m@ VGS =-2.5V ESD Protected Up To

TMP10N80/TMPF10N80 TMP10N80G/TMPF10N80G VDSS = 880 V @Tjmax Features ID = 9.5A Low gate charge RDS(ON) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N80 / TMPF10N80 TO-220 / TO-220F TMP10N80 / TMPF10N80 RoHS TMP10N

TMP10N60A(G)/TMPF10N60A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 10A

TMP10N60/TMPF10N60TMP10N60G/TMPF10N60GVDSS = 660 V @TjmaxFeaturesID = 10A Low gate chargeRDS(on) = 0.75 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP10N60 / TMPF10N60 TO-220 / TO-220F TMP10N60 / TMPF10N60 RoHSTMP10N60G / TMPF10N60G

TMP10N65/TMPF10N65 TMP10N65G/TMPF10N65G VDSS = 715 V @Tjmax Features ID = 9.5A Low gate charge RDS(on) = 0.98 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N65 / TMPF10N65 TO-220 / TO-220F TMP10N65 / TMPF10N65 RoHS TMP10N

TMP10N65A(G)/TMPF10N65A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 9.5A

WMM10N65C4, WML10N6 WM C4 65C4, MO10N65CWMN10N65C4, WMP10N6 WM C4 65C4, MK10N65C 650V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM

WM 2, WMN10N MM10N100CML10N100C2 N100C2, WM C2 WMJ10N100C2, WM C2, WMP10N MK10N100CMO10N100C N100C2, WM C2 1000V 1.1 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low ga

WM 2, WMN10N MM10N105CML10N105C2 N105C2, WM C2 WMJ10N105C2, WM C2, WMP10N MK10N105CMO10N105C N105C2, WM C2 1050V 1.1 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low ga

WML10 WMK10N60N65EM, W 65EM, WMM10N65EM WMN10 WMP10N60N65EM, W 65EM, WMO10N65EM 650V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate

WMM10N70C4, WML10N7 WM C4 70C4, MO10N70CWMN10N70C4, WMP10N7 WM C4 70C4, MK10N70C 700V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM

WML10 WMK10N70N70EM, W 70EM, WMM10N70EM WMN10 WMP10N70N70EM, W 70EM, WMO10N70EM 700V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate

WMM10N60C4, WML10N6 WM C4 60C4, MO10N60CWMN10N60C4, WMP10N6 WM C4 60C4, MK10N60C 600V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM

WML10N80M3, W 80M3, WM M3 WMN10N8 MM10N80MWMO1 80M3, WM M3 10N80M3, WMP10N8 MK10N80M 800V 0.86 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perfo

ZXMP10A18K100V DPAK P-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.150 @ VGS= -10V -5.9-1000.190 @ VGS= -6V -5.2DescriptionDThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastGswitching, making it ideal for high efficiency power managementapplications.FeaturesS Low on

ZXMP10A16K100V DPAK P-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.235 @ VGS= -10V 4.6-1000.285 @ VGS= -6V 4.2DescriptionDThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastGswitching, making it ideal for high efficiency power managementapplications.FeaturesS Low on-

ZXMP10A18Kwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Swit

CMP100N04www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0055 at VGS = 10 V 100COMPLIANT 40 130 nC0.0070 at VGS = 4.5 V 90APPLICATIONS Synchronous RectificationTO-220AB Power SuppliesDGSG D STop ViewN-Channel MOSFETABSOLUT

ZXMP10A17GTAwww.VBsemi.twP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100% Rg and UIS Tested0.200 at VGS = - 10 V - 3.0- 100 13.2 nC0.230 at VGS = - 6 V - 2.4APPLICATIONSAvailable Active Clamp in Intermediate DC/DC Power SuppliesS H-Bridge High Side Switch forLighting Applicatio

TMA10N65H, TMP10N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA10N65H TO-220F A1

isc P-Channel MOSFET Transistor DMP10H400SK3FEATURESDrain Current I = -9A@ T =25D CDrain Source Voltage-: V = -100V(Min)DSSStatic Drain-Source On-Resistance: R = 240m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general