MP101 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MP101

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 20 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 0.5 MHz

Capacitancia de salida (Cc): 150 pF

Ganancia de corriente contínua (hFE): 10

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MP101 datasheet

 0.1. Size:232K  diodes
dmp1012ucb9.pdf pdf_icon

MP101

DMP1012UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25 C) Features LD-MOS Technology with the Lowest Figure of Merit VDSS RDS(on) Qg Qgd ID RDS(on) = 8.2m to Minimize On-State Losses -8V 8.2m 8.1nC 1.8nC -10A Qg = 8.1nC for Ultra-Fast Switching Vgs(th) = -0.8V typ. for a Low Turn-On Potential CSP with Footprint 1.5mm 1.

 0.2. Size:457K  diodes
dmp1011ucb9.pdf pdf_icon

MP101

DMP1011UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25 C) Features LD-MOS Technology with the Lowest Figure of Merit VDSS RDS(on) Qg Qgd ID RDS(on) = 8.2m to Minimize On-State Losses -8V 8.2m 8.1nC 1.8nC -10A Qg = 8.1nC for Ultra-Fast Switching Vgs(th) = -0.8V typ. for a Low Turn-On Potential CSP with Footprint 1.5mm 1.5

 0.3. Size:326K  diodes
dmp1018ucb9.pdf pdf_icon

MP101

DMP1018UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features LD-MOS technology with the lowest Figure of Merit VDSS RDS(on) Qg Qgd ID RDS(on) = 12m to Minimize On-State Losses -12V 12m 4.9nC 1.1nC -7.6A Qg = 4.9nC for Ultra-Fast Switching Vgs(th) = -0.8V typ. for a Low Turn-On Potential Typ. @ VGS = -4.5V, TA = +25 C CSP with Footprint 1.5mm 1.5

Otros transistores... MN32, MN48, MN49, MO810, MO816, MO818, MO870, MP10, TIP31, MP101A, MP101B, MP102, MP103, MP103A, MP104, MP1077, MP10A