MP101 Specs and Replacement

Type Designator: MP101

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 20 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

Transition Frequency (ft): 0.5 MHz

Collector Capacitance (Cc): 150 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

 MP101 Substitution

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MP101 datasheet

 0.1. Size:232K  diodes

dmp1012ucb9.pdf pdf_icon

MP101

DMP1012UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25 C) Features LD-MOS Technology with the Lowest Figure of Merit VDSS RDS(on) Qg Qgd ID RDS(on) = 8.2m to Minimize On-State Losses -8V 8.2m 8.1nC 1.8nC -10A Qg = 8.1nC for Ultra-Fast Switching Vgs(th) = -0.8V typ. for a Low Turn-On Potential CSP with Footprint 1.5mm 1.... See More ⇒

 0.2. Size:457K  diodes

dmp1011ucb9.pdf pdf_icon

MP101

DMP1011UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25 C) Features LD-MOS Technology with the Lowest Figure of Merit VDSS RDS(on) Qg Qgd ID RDS(on) = 8.2m to Minimize On-State Losses -8V 8.2m 8.1nC 1.8nC -10A Qg = 8.1nC for Ultra-Fast Switching Vgs(th) = -0.8V typ. for a Low Turn-On Potential CSP with Footprint 1.5mm 1.5... See More ⇒

 0.3. Size:326K  diodes

dmp1018ucb9.pdf pdf_icon

MP101

DMP1018UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features LD-MOS technology with the lowest Figure of Merit VDSS RDS(on) Qg Qgd ID RDS(on) = 12m to Minimize On-State Losses -12V 12m 4.9nC 1.1nC -7.6A Qg = 4.9nC for Ultra-Fast Switching Vgs(th) = -0.8V typ. for a Low Turn-On Potential Typ. @ VGS = -4.5V, TA = +25 C CSP with Footprint 1.5mm 1.5... See More ⇒

Detailed specifications: MN32, MN48, MN49, MO810, MO816, MO818, MO870, MP10, TIP31, MP101A, MP101B, MP102, MP103, MP103A, MP104, MP1077, MP10A

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