MP11 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MP11

Material: Ge

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 15 V

Corriente del colector DC máxima (Ic): 0.02 A

Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1 MHz

Capacitancia de salida (Cc): 60 pF

Ganancia de corriente contínua (hFE): 25

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MP11 datasheet

 ..1. Size:796K  russia
 mp9a mp10 mp10a mp10b mp11 mp11a.pdf pdf_icon

MP11

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 dmp1100ucb4.pdf pdf_icon

MP11

 0.2. Size:562K  fuji
 fmp11n60e.pdf pdf_icon

MP11

FMP11N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)

 0.3. Size:623K  fuji
 fmp11n70e.pdf pdf_icon

MP11

FMP11N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)

MOSTRAR MÁS

Otros transistores... MP101B, MP102, MP103, MP103A, MP104, MP1077, MP10A, MP10B, 2SC945, MP110, MP110B, 2SB1366F-Y, MP110BB, MP110BG, MP110BR, MP110G, MP110O