MP2000A
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MP2000A
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 106
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 30
V
Tensión emisor-base (Veb): 2
V
Corriente del colector DC máxima (Ic): 25
A
Temperatura operativa máxima (Tj): 110
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.2
MHz
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar MP2000A
MP2000A
Datasheet (PDF)
9.1. Size:365K 1
dmp2002ups-13.pdf 
DMP2002UPS Green20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package-Cooler Running Applications BVDSS RDS(ON) TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 1.9m @ VGS = -10V -60A
9.2. Size:598K diodes
dmp2003ups.pdf
DMP2003UPS Green20V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features ID Thermally Efficient Package-Cooler Running Applications BVDSS RDS(ON) TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 2.2m @ VGS = -10V -150A
9.3. Size:592K diodes
dmp2002ups.pdf
DMP2002UPS Green20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package-Cooler Running Applications V(BR)DSS RDS(ON) TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 1.9m @ VGS = -10V -60A
9.4. Size:398K diodes
dmp2006ufg.pdf
DMP2006UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TC = +25C Small form factor, thermally efficient package enables higher density end products 5.5m @ VGS = -4.5V -40A -20V Occupies just 33% of the board area occupied by SO-8 enabling 7.5m
9.5. Size:217K diodes
dmp2004wk.pdf
DMP2004WKP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-323 Very Low Gate Threshold Voltage VGS(th)
9.6. Size:137K diodes
dmp2004tk.pdf
DMP2004TKP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-523 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level
9.7. Size:148K diodes
dmp2004dwk.pdf
DMP2004DWKDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case: SOT-363 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage VGS(TH)
9.8. Size:142K diodes
dmp2004vk.pdf
DMP2004VKDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage VGS(TH)
9.9. Size:250K diodes
dmp2008ufg.pdf
DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25C Small form factor thermally efficient package enables higher density end products 8m @ VGS = -4.5V -14A Occupies just 33% of the board area occupied by SO-8 enabling 9.8m @ VGS = -2.
9.10. Size:217K diodes
dmp2004dmk.pdf
DMP2004DMKDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case: SOT-26 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage VGS(th)
9.11. Size:142K diodes
dmp2004k.pdf
DMP2004KP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-23 Very Low Gate Threshold Voltage VGS(TH)
9.12. Size:239K diodes
dmp2007ufg.pdf
DMP2007UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TC = +25 Small form factor thermally efficient package enables higher C density end products 5.5m @ VGS = -10V -40A Occupies just 33% of the board area occupied by SO-8 enabling -20V 7.0m
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
