Биполярный транзистор MP2000A - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MP2000A
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 106 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
Макcимальный постоянный ток коллектора (Ic): 25 A
Предельная температура PN-перехода (Tj): 110 °C
Граничная частота коэффициента передачи тока (ft): 0.2 MHz
Статический коэффициент передачи тока (hfe): 25
Корпус транзистора: TO3
MP2000A Datasheet (PDF)
dmp2002ups-13.pdf
DMP2002UPS Green20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package-Cooler Running Applications BVDSS RDS(ON) TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 1.9m @ VGS = -10V -60A
dmp2003ups.pdf
DMP2003UPS Green20V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features ID Thermally Efficient Package-Cooler Running Applications BVDSS RDS(ON) TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 2.2m @ VGS = -10V -150A
dmp2002ups.pdf
DMP2002UPS Green20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package-Cooler Running Applications V(BR)DSS RDS(ON) TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 1.9m @ VGS = -10V -60A
dmp2006ufg.pdf
DMP2006UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TC = +25C Small form factor, thermally efficient package enables higher density end products 5.5m @ VGS = -4.5V -40A -20V Occupies just 33% of the board area occupied by SO-8 enabling 7.5m
dmp2004wk.pdf
DMP2004WKP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-323 Very Low Gate Threshold Voltage VGS(th)
dmp2004tk.pdf
DMP2004TKP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-523 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level
dmp2004dwk.pdf
DMP2004DWKDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case: SOT-363 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage VGS(TH)
dmp2004vk.pdf
DMP2004VKDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage VGS(TH)
dmp2008ufg.pdf
DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25C Small form factor thermally efficient package enables higher density end products 8m @ VGS = -4.5V -14A Occupies just 33% of the board area occupied by SO-8 enabling 9.8m @ VGS = -2.
dmp2004dmk.pdf
DMP2004DMKDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case: SOT-26 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage VGS(th)
dmp2004k.pdf
DMP2004KP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-23 Very Low Gate Threshold Voltage VGS(TH)
dmp2007ufg.pdf
DMP2007UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TC = +25 Small form factor thermally efficient package enables higher C density end products 5.5m @ VGS = -10V -40A Occupies just 33% of the board area occupied by SO-8 enabling -20V 7.0m
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