MP25 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MP25
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 40 V
   Tensión emisor-base (Veb): 40 V
   Corriente del colector DC máxima (Ic): 0.3 A
   Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (ft): 0.2 MHz
Ganancia de corriente contínua (hfe): 13

Búsqueda de reemplazo de transistor bipolar MP25

MP25 Datasheet (PDF)

0.1. Size:247K diodes
dmp25h18dlfde.pdf

DMP25H18DLFDE 250V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm Profile Ideal for Low-Profile Applications ID max V(BR)DSS RDS(ON) max PCB Footprint of 4mm2 TA = +25C Low Gate Threshold Voltage 14 @ VGS = -10V -0.26A -250V Low On-Resistance 18 @ VGS = -3.5V -0.23A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

0.2. Size:403K diodes
dmp2540ucb9.pdf

DMP2540UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25C) Features and Benefits LD-MOS Technology with the Lowest Figure of Merit: VDSS RDS(on) Q g Qgd ID RDS(on) = 33m to Minimize On-State Losses -25V 33m 4.8nC 1.0nC -5.2A Qg = 4.8nC for Ultra-Fast Switching Vgs(th) = -0.6V typ. for a Low Turn-On Potential CSP with Foot

0.3. Size:68K utc
mp2510.pdf

UNISONIC TECHNOLOGIES CO., LTD MP2510 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP TRANSISTOR DESCRIPTION The UTC MP2510 is a PNP transistor, it uses UTCs advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc. The UTC MP2510 is suitable for automobile power amplifiers, etc. FEATURES * High DC c

0.4. Size:943K russia
mp25a mp25b mp26a mp26b.pdf