MP25 Datasheet, Equivalent, Cross Reference Search
Type Designator: MP25
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Emitter-Base Voltage |Veb|: 40 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN: 13
Noise Figure, dB: -
MP25 Transistor Equivalent Substitute - Cross-Reference Search
MP25 Datasheet (PDF)
dmp25h18dlfde.pdf
DMP25H18DLFDE 250V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm Profile Ideal for Low-Profile Applications ID max V(BR)DSS RDS(ON) max PCB Footprint of 4mm2 TA = +25C Low Gate Threshold Voltage 14 @ VGS = -10V -0.26A -250V Low On-Resistance 18 @ VGS = -3.5V -0.23A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
dmp2540ucb9.pdf
DMP2540UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25C) Features and Benefits LD-MOS Technology with the Lowest Figure of Merit: VDSS RDS(on) Q g Qgd ID RDS(on) = 33m to Minimize On-State Losses -25V 33m 4.8nC 1.0nC -5.2A Qg = 4.8nC for Ultra-Fast Switching Vgs(th) = -0.6V typ. for a Low Turn-On Potential CSP with Foot
mp2510.pdf
UNISONIC TECHNOLOGIES CO., LTD MP2510 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP TRANSISTOR DESCRIPTION The UTC MP2510 is a PNP transistor, it uses UTCs advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc. The UTC MP2510 is suitable for automobile power amplifiers, etc. FEATURES * High DC c
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
