MP602 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MP602
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 85 W
Tensión colector-base (Vcb): 90 V
Tensión colector-emisor (Vce): 70 V
Tensión emisor-base (Veb): 1 V
Corriente del colector DC máxima (Ic): 25 A
Temperatura operativa máxima (Tj): 110 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TO3
Búsqueda de reemplazo de MP602
MP602 Datasheet (PDF)
dmp6023le.pdf

DMP6023LEGreen60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Fast Switching Speed TA = +25C 28m @ VGS = -10V -7A Low Threshold-60V 35m @ VGS = -4.5V -6.2A Low Gate Drive Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimo
dmp6023lss.pdf

DMP6023LSS 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max TA = +25C Fast Switching Speed Low Threshold 25m @ VGS = -10V -6.6A Low Gate Drive -60V 33m @ VGS = -4.5V -5.8A Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen
dmp6023lfg.pdf

DMP6023LFG 60V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = +25C 25m @ VGS = -10V -7.7A density end products -60V -6.8A 33m @ VGS = -4.5V Occupies just 33% of the board
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: TK71A | BC817F | SD1434 | PH3135-25S | BFP720 | 2SC553 | MP5858
History: TK71A | BC817F | SD1434 | PH3135-25S | BFP720 | 2SC553 | MP5858



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