MP602 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MP602 📄📄

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 85 W

Tensión colector-base (Vcb): 90 V

Tensión colector-emisor (Vce): 70 V

Tensión emisor-base (Veb): 1 V

Corriente del colector DC máxima (Ic): 25 A

Temperatura operativa máxima (Tj): 110 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 50

Encapsulados: TO3

📄📄 Copiar

Búsqueda de reemplazo de MP602

- Selecciónⓘ de transistores por parámetros

MP602 datasheet

0.1. Size:351K diodes
dmp6023le.pdf pdf_icon

DMP6023LE Green 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Fast Switching Speed TA = +25 C 28m @ VGS = -10V -7A Low Threshold -60V 35m @ VGS = -4.5V -6.2A Low Gate Drive Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimo

0.2. Size:356K diodes
dmp6023lss.pdf pdf_icon

DMP6023LSS 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max TA = +25 C Fast Switching Speed Low Threshold 25m @ VGS = -10V -6.6A Low Gate Drive -60V 33m @ VGS = -4.5V -5.8A Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen

0.3. Size:468K diodes
dmp6023lfg.pdf pdf_icon

DMP6023LFG 60V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = +25 C 25m @ VGS = -10V -7.7A density end products -60V -6.8A 33m @ VGS = -4.5V Occupies just 33% of the board

Otros transistores... MP5856, MP5857, MP5858, MP5910, MP600, MP600A, MP601, MP601A, 2SD718, MP602A, MP603, MP603A, MP6076, MP800, MP801, MP8111, MP8112

MP602 Datasheet. Equivalente