MP602A Todos los transistores

 

MP602A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MP602A
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 85 W
   Tensión colector-base (Vcb): 90 V
   Tensión colector-emisor (Vce): 70 V
   Tensión emisor-base (Veb): 1 V
   Corriente del colector DC máxima (Ic): 25 A
   Temperatura operativa máxima (Tj): 110 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO3
 

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MP602A Datasheet (PDF)

 9.1. Size:351K  diodes
 dmp6023le.pdf pdf_icon

MP602A

DMP6023LEGreen60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Fast Switching Speed TA = +25C 28m @ VGS = -10V -7A Low Threshold-60V 35m @ VGS = -4.5V -6.2A Low Gate Drive Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimo

 9.2. Size:356K  diodes
 dmp6023lss.pdf pdf_icon

MP602A

DMP6023LSS 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max TA = +25C Fast Switching Speed Low Threshold 25m @ VGS = -10V -6.6A Low Gate Drive -60V 33m @ VGS = -4.5V -5.8A Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen

 9.3. Size:468K  diodes
 dmp6023lfg.pdf pdf_icon

MP602A

DMP6023LFG 60V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = +25C 25m @ VGS = -10V -7.7A density end products -60V -6.8A 33m @ VGS = -4.5V Occupies just 33% of the board

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MPQ3641 | CD9015A

 

 
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