MP602A Datasheet, Equivalent, Cross Reference Search
Type Designator: MP602A
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 110 °C
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO3
MP602A Transistor Equivalent Substitute - Cross-Reference Search
MP602A Datasheet (PDF)
dmp6023le.pdf
DMP6023LEGreen60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Fast Switching Speed TA = +25C 28m @ VGS = -10V -7A Low Threshold-60V 35m @ VGS = -4.5V -6.2A Low Gate Drive Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimo
dmp6023lss.pdf
DMP6023LSS 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max TA = +25C Fast Switching Speed Low Threshold 25m @ VGS = -10V -6.6A Low Gate Drive -60V 33m @ VGS = -4.5V -5.8A Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen
dmp6023lfg.pdf
DMP6023LFG 60V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = +25C 25m @ VGS = -10V -7.7A density end products -60V -6.8A 33m @ VGS = -4.5V Occupies just 33% of the board
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: KTA1297
