MPS5135 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MPS5135  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 40 MHz

Capacitancia de salida (Cc): 25 pF

Ganancia de corriente contínua (hFE): 50

Encapsulados: TO92

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MPS5135 datasheet

 9.1. Size:96K  motorola
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MPS5135

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS5179/D High Frequency Transistor NPN Silicon MPS5179 Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol Value Unit CASE 29 04, STYLE 1 Collector Emitter Voltage VCEO 12 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 20 Vdc Emitter Base Voltage VEBO 2.5 Vdc

 9.2. Size:992K  fairchild semi
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MPS5135

MPS5179 MMBT5179 PN5179 C E C TO-92 C TO-92 B B E SOT-23 E B Mark 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 A to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40. Absolute Maximum Ratings* TA = 25 C unless o

 9.3. Size:30K  samsung
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MPS5135

 9.4. Size:70K  central
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MPS5135

TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com

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