MPS6518 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MPS6518 📄📄
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 150 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hFE): 150
Encapsulados: TO92
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MPS6518 datasheet
..1. Size:292K fairchild semi
mps6518.pdf 
Discrete POWER & Signal Technologies MPS6518 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 66. See 2N3906 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V
8.1. Size:103K fairchild semi
mmbt6515 mps6515.pdf
MPS6515/MMBT6515 NPN General Purpose Amplifier 3 This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a 2 switch and to 100MHz as an amplifier. SOT-23 TO-92 1 Mark 3J 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Valu
8.2. Size:57K fairchild semi
mps651.pdf
MPS651 Switching and Amplifier Applications TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current 0.8 A PC Collector Dissipation 625 mW TJ Junction Temperat
8.3. Size:126K fairchild semi
mps6513.pdf
September 2007 MPS6513 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. Sourced from Proces 23. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Ba
8.4. Size:47K fairchild semi
mps6514.pdf
MPS6514 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Vo
8.6. Size:111K central
mps651x series.pdf
DATA SHEET NPN PNP MPS6512 MPS6516 MPS6513 MPS6517 MPS6514 MPS6518 MPS6515 MPS6519 COMPLEMENTARY SILICON TRANSISTORS JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPS6512 Series (NPN) and MPS6516 Series (PNP) types are molded Epoxy Silicon Small Signal Transistors designed for general-purpose amplifier applications. MAXIMUM RATINGS (TA=25 C unless otherwise noted)
8.7. Size:68K onsemi
mps650 mps651 mps750 mps751.pdf
NPN - MPS650, MPS651; PNP - MPS750, MPS751 MPS651 and MPS751 are Preferred Devices Amplifier Transistors Features Pb-Free Packages are Available* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCE Vdc COLLECTOR NPN MPS650; MPS750 40 3 MPS651; MPS751 60 1 EMITTER Collector-Base Voltage VCB Vdc 2 MPS650; MPS750 60
8.8. Size:106K onsemi
mps651rlrmg.pdf
NPN - MPS650, MPS651; PNP - MPS750, MPS751 Amplifier Transistors Features These are Pb-Free Devices* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCE Vdc COLLECTOR NPN MPS650; MPS750 40 3 MPS651; MPS751 60 1 EMITTER Collector-Base Voltage VCB Vdc 2 MPS650; MPS750 60 BASE MPS651; MPS751 80 PNP Emitter-Base V
8.9. Size:106K onsemi
mps651g.pdf
NPN - MPS650, MPS651; PNP - MPS750, MPS751 Amplifier Transistors Features These are Pb-Free Devices* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCE Vdc COLLECTOR NPN MPS650; MPS750 40 3 MPS651; MPS751 60 1 EMITTER Collector-Base Voltage VCB Vdc 2 MPS650; MPS750 60 BASE MPS651; MPS751 80 PNP Emitter-Base V
8.10. Size:217K secos
mps651.pdf
MPS651 0.625 W, 2 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G H Switching and Amplifier Applications J A D Collector Millimeter REF. Min. Max. 2 B A 4.40 4.70 B 4.30 4.70 K C 12.70 - D 3.30 3.81 3 E 0.36 0.56 Base F 0.36 0.51 E C F
8.11. Size:424K jiangsu
mps651.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 MPS651 TRANSISTOR (NPN) 1.EMITTER FEATURES 2.BASE General Purpose Amplifier 3.COLLECTOR Equivalent Circuit MPS651=Device code MPS651 Solid dot=Green molding compound device, if none,the normal device XXX=Code
8.12. Size:350K kec
mps651.pdf
SEMICONDUCTOR MPS651 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE B C FEATURES High Voltage VCEO=60V(Min.). High Current IC(Max.)=1A. N DIM MILLIMETERS High Transition Frequency fT=150MHz(Typ.). A 4.70 MAX E K B 4.80 MAX Wide Area of Safe Operation. G C 3.70 MAX D Complementary to MPS751. D 0.45 E 1.00 F 1.27 G
8.14. Size:159K first silicon
mps651.pdf
SEMICONDUCTOR MPS651 TECHNICAL DATA MPS651 TRANSISTOR (NPN) B C FEATURES General Purpose Amplifier DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 MAXIMUM RATINGS (Ta=25 unless otherwise noted) G 0.85 H 0.45 _ H J 14.00 + 0.50 Symbol Parameter Value Unit L 2.30 F F M 0.51 MAX VCBO Collector-Base Voltage 80 V VCEO Collector-Em
Otros transistores... MPS651, MPS6511, MPS6512, MPS6513, MPS6514, MPS6515, MPS6516, MPS6517, S8550, MPS6519, MPS6520, MPS6521, MPS6522, MPS6523, MPS6530, MPS6531, MPS6532
