MPS6518 Datasheet and Replacement

Discrete POWER & SignalTechnologiesMPS6518C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 100 mA. Sourcedfrom Process 66. See 2N3906 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 V

MPS6515/MMBT6515NPN General Purpose Amplifier3 This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a 2switch and to 100MHz as an amplifier.SOT-23TO-92 1Mark: 3J11. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25C unless otherwise notedSymbol Parameter Valu

MPS651Switching and Amplifier ApplicationsTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 80 VVCEO Collector-Emitter Voltage 60 VVEBO Emitter-Base Voltage 5 VIC Collector Current 0.8 APC Collector Dissipation 625 mWTJ Junction Temperat

September 2007MPS6513NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. Sourced from Proces 23. TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Ba

MPS6514NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base Vo

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DATA SHEETNPN PNPMPS6512 MPS6516MPS6513 MPS6517MPS6514 MPS6518 MPS6515 MPS6519COMPLEMENTARY SILICON TRANSISTORS JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPS6512 Series (NPN) and MPS6516 Series (PNP) types are molded Epoxy Silicon Small Signal Transistors designed for general-purpose amplifier applications. MAXIMUM RATINGS (TA=25C unless otherwise noted)

NPN - MPS650, MPS651;PNP - MPS750, MPS751MPS651 and MPS751 are Preferred DevicesAmplifier TransistorsFeatures Pb-Free Packages are Available*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60

NPN - MPS650, MPS651;PNP - MPS750, MPS751Amplifier TransistorsFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60BASEMPS651; MPS751 80PNPEmitter-Base V

NPN - MPS650, MPS651;PNP - MPS750, MPS751Amplifier TransistorsFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60BASEMPS651; MPS751 80PNPEmitter-Base V

MPS651 0.625 W, 2 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G HSwitching and Amplifier Applications JA DCollector Millimeter REF. Min. Max. 2 BA 4.40 4.70 B 4.30 4.70 KC 12.70 - D 3.30 3.81 3 E 0.36 0.56 Base F 0.36 0.51 E C F

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO 92 MPS651 TRANSISTOR (NPN)1.EMITTERFEATURES 2.BASE General Purpose Amplifier3.COLLECTOR Equivalent Circuit MPS651=Device code MPS651 Solid dot=Green molding compound device, if none,the normal deviceXXX=Code

SEMICONDUCTOR MPS651TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USEB CFEATURESHigh Voltage : VCEO=60V(Min.). High Current : IC(Max.)=1A.N DIM MILLIMETERSHigh Transition Frequency : fT=150MHz(Typ.).A 4.70 MAXEKB 4.80 MAXWide Area of Safe Operation. GC 3.70 MAXDComplementary to MPS751.D 0.45E 1.00F 1.27G

SEMICONDUCTORMPS651TECHNICAL DATAMPS651 TRANSISTOR (NPN) B CFEATURES General Purpose Amplifier DIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXE 1.00F 1.27MAXIMUM RATINGS (Ta=25 unless otherwise noted) G 0.85H 0.45_HJ 14.00 + 0.50Symbol Parameter Value Unit L 2.30F FM 0.51 MAXVCBO Collector-Base Voltage 80 V VCEO Collector-Em