MPS6576 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS6571/DAmplifier TransistorNPN Silicon MPS6571COLLECTOR32BASE112EMITTER 3MAXIMUM RATINGSCASE 2904, STYLE 1TO92 (TO226AA)Rating Symbol Value UnitCollectorEmitter Voltage VCEO 20 VdcCollectorBase Voltage VCBO 25 VdcEmitterBase Voltage VEBO 3.0 VdcCollector Current Continuous

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS650/DNPNAmplifier TransistorsMPS650*MPS651COLLECTOR COLLECTOR3 3 PNPMPS7502 2BASE BASE*MPS751NPN PNPVoltage and current are1 1negative for PNP transistorsEMITTER EMITTER*Motorola Preferred DevicesMAXIMUM RATINGSMPS650 MPS651MPS750 MPS751Rating Symbol UnitCollectorEmitter Voltage V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS6560/DAudio TransistorMPS6560NPN SiliconCOLLECTOR32BASE1213EMITTERCASE 2904, STYLE 1MAXIMUM RATINGSTO92 (TO226AA)Rating Symbol Value UnitCollectorEmitter Voltage VCEO 25 VdcCollectorBase Voltage VCBO 25 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current Continuous I

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS6507/DAmplifier TransistorCOLLECTORMPS6507NPN Silicon32BASE1EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit23CollectorEmitter Voltage VCEO 20 VdcCollectorBase Voltage VCBO 30 VdcCASE 2904, STYLE 1TO92 (TO226AA)EmitterBase Voltage VEBO 3.0 VdcCollector Current Continuo

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS6530/DAmplifier TransistorMPS6530NPN SiliconCOLLECTOR32BASE1213EMITTERCASE 2904, STYLE 1MAXIMUM RATINGSTO92 (TO226AA)Rating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcCollectorBase Voltage VCBO 60 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current Continuo

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS6521/DCOLLECTOR 3Amplifier Transistors NPN2BASE*MPS6521 PNP1 EMITTERMPS6523COLLECTOR 3Voltage and current are negative for PNP transistors2BASE*Motorola Preferred Device1 EMITTERMAXIMUM RATINGSRating Symbol NPN PNP UnitCollectorEmitter Voltage VCEO VdcMPS6521 25 MPS6523 25C

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS6520/DCOLLECTOR 3Amplifier Transistors NPN2MPS6520BASE*MPS65211 EMITTER PNPMPS6523COLLECTOR 3Voltage and current are negative2 for PNP transistorsBASE*Motorola Preferred Device1 EMITTERMAXIMUM RATINGSRating Symbol NPN PNP UnitCollectorEmitter Voltage VCEO VdcMPS6520, MPS6521 25

MPS6515/MMBT6515NPN General Purpose Amplifier3 This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a 2switch and to 100MHz as an amplifier.SOT-23TO-92 1Mark: 3J11. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25C unless otherwise notedSymbol Parameter Valu

Discrete POWER & SignalTechnologiesMPS6518C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 100 mA. Sourcedfrom Process 66. See 2N3906 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 V

Discrete POWER & SignalTechnologiesMPS6562C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Sourcedfrom Process 67. See TN4033A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 V

Discrete POWER & SignalTechnologiesMPS6523C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourcedfrom Process 68. See PN200 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VV

MPS651Switching and Amplifier ApplicationsTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 80 VVCEO Collector-Emitter Voltage 60 VVEBO Emitter-Base Voltage 5 VIC Collector Current 0.8 APC Collector Dissipation 625 mWTJ Junction Temperat

Discrete POWER & SignalTechnologiesMPS6531C TO-92BENPN General Purpose AmplifierThis device is designed for use as a medium power amplifierand switch requiring collector currents to 500 mA. Sourcedfrom Process 19. See PN2222A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VV C

September 2007MPS6513NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. Sourced from Proces 23. TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Ba

MPS6521NPN General Purpose Amplifier This device is deisgned for general purpose amplifier applications at collector to 300mA. Sourced from process 10.TO-9211. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage 4

MPS6514NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base Vo

Discrete POWER & SignalTechnologiesMPS6534C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Sourcedfrom Process 63. See PN2907A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 V

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145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

DATA SHEETNPN PNPMPS6512 MPS6516MPS6513 MPS6517MPS6514 MPS6518 MPS6515 MPS6519COMPLEMENTARY SILICON TRANSISTORS JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPS6512 Series (NPN) and MPS6516 Series (PNP) types are molded Epoxy Silicon Small Signal Transistors designed for general-purpose amplifier applications. MAXIMUM RATINGS (TA=25C unless otherwise noted)

NPN - MPS650, MPS651;PNP - MPS750, MPS751MPS651 and MPS751 are Preferred DevicesAmplifier TransistorsFeatures Pb-Free Packages are Available*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60

MPS6560Audio TransistorNPN SiliconFeatures Pb-Free Package is Available*http://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value UnitCollector -Emitter Voltage VCEO 25 Vdc2BASECollector -Base Voltage VCBO 25 VdcEmitter -Base Voltage VEBO 5.0 Vdc1Collector Current - Continuous IC 500 mAdcEMITTERTotal Device Dissipation @ TA = 25C PD 625 WDerate abo

NPN - MPS650, MPS651;PNP - MPS750, MPS751Amplifier TransistorsFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60BASEMPS651; MPS751 80PNPEmitter-Base V

MPS6521 (NPN)MPS6523 (PNP)MPS6521 is a Preferred DeviceAmplifier TransistorsFeatures Voltage and Current are Negative for PNP Transistorshttp://onsemi.com Pb-Free Packages are Available*COLLECTORCOLLECTORMAXIMUM RATINGS33Rating Symbol NPN PNP Unit22Collector -Emitter Voltage VCEO VdcBASEBASEMPS6521 25 -MPS6523 - 2511Collector -Base Voltage VCB

NPN - MPS650, MPS651;PNP - MPS750, MPS751Amplifier TransistorsFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60BASEMPS651; MPS751 80PNPEmitter-Base V

MPS651 0.625 W, 2 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G HSwitching and Amplifier Applications JA DCollector Millimeter REF. Min. Max. 2 BA 4.40 4.70 B 4.30 4.70 KC 12.70 - D 3.30 3.81 3 E 0.36 0.56 Base F 0.36 0.51 E C F

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS MPS6530MPS6531TO-92Plastic PackageCBEAMPLIFIER TRANSISTORABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 40 VVCBOCollector Base Voltage 60 VVEBOEmitter Base Voltage 5 VICCollector Current Conti

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN/PNP SILICON PLANAR AMPLIFIER TRANSISTORS MPS650 , MPS651 (NPN)MPS750 , MPS751 (PNP)TO -92CBEAMPLIFIER TRANSISTORSABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL MPS650 MPS651 UNITSMPS750 MPS751Collector -Emitter Voltage VCEO 40 60 VCollector -Base Voltage VCBO 60 80 VEmitter -Base Vo

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS MPS6560 NPNMPS6562 PNPTO-92Plastic PackageCBEAudioTransistorsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage 25 VVCEOCollector Emitter Voltage 25 VVEBOEmitter Base Voltage 5.0 VICCollector Current Con

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO 92 MPS651 TRANSISTOR (NPN)1.EMITTERFEATURES 2.BASE General Purpose Amplifier3.COLLECTOR Equivalent Circuit MPS651=Device code MPS651 Solid dot=Green molding compound device, if none,the normal deviceXXX=Code

SEMICONDUCTOR MPS651TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USEB CFEATURESHigh Voltage : VCEO=60V(Min.). High Current : IC(Max.)=1A.N DIM MILLIMETERSHigh Transition Frequency : fT=150MHz(Typ.).A 4.70 MAXEKB 4.80 MAXWide Area of Safe Operation. GC 3.70 MAXDComplementary to MPS751.D 0.45E 1.00F 1.27G

SEMICONDUCTORMPS651TECHNICAL DATAMPS651 TRANSISTOR (NPN) B CFEATURES General Purpose Amplifier DIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXE 1.00F 1.27MAXIMUM RATINGS (Ta=25 unless otherwise noted) G 0.85H 0.45_HJ 14.00 + 0.50Symbol Parameter Value Unit L 2.30F FM 0.51 MAXVCBO Collector-Base Voltage 80 V VCEO Collector-Em