MPS6716 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MPS6716
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 30 pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar MPS6716
MPS6716 Datasheet (PDF)
mps6717rev0d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS6717/DOne Watt Amplifier TransistorNPN SiliconMPS6717COLLECTOR32BASE1EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit23CollectorEmitter Voltage VCEO 80 VdcCASE 2905, STYLE 1CollectorBase Voltage VCBO 80 VdcTO92 (TO226AE)EmitterBase Voltage VEBO 5.0 VdcCollector Current
mps6714rev0d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS6714/DOne Watt Amplifier TransistorsNPN Silicon MPS6714COLLECTOR3MPS67152BASE1EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage VCEO Vdc 12MPS6714 303MPS6715 40CASE 2905, STYLE 1CollectorBase Voltage VCBO VdcTO92 (TO226AE)MPS6714 40MPS6715 50Emitter
mps6717-d.pdf
MPS6717One Watt AmplifierTransistorNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS 2BASERating Symbol Value UnitCollector -Emitter Voltage VCEO 80 Vdc1Collector -Base Voltage VCBO 80 VdcEMITTEREmitter -Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 500 mAdcTotal Device Dissipation @ TA = 25C PD 1.
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
