MPS918 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MPS918

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.625 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 600 MHz

Capacitancia de salida (Cc): 1.7 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO92

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MPS918 datasheet

 ..1. Size:46K  onsemi
 mps918 mps3563.pdf pdf_icon

MPS918

MPS918, MPS3563 MPS918 is a Preferred Device Amplifier Transistors NPN Silicon Features Pb-Free Packages are Available* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector -Emitter Voltage VCEO Vdc MPS918 15 1 MPS3563 12 EMITTER Collector -Base Voltage VCBO Vdc MPS918 30 MPS3563 30 MARKING DIAGRAM Emitter -Base Voltage VEBO Vdc MPS9

 0.1. Size:81K  motorola
 mps918re.pdf pdf_icon

MPS918

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA MPS918/D Amplifier Transistors MPS918* NPN Silicon MPS3563 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol MPS918 MPS3563 Unit CASE 29 04, STYLE 1 Collector Emitter Voltage VCEO 15 12 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 30 30 Vdc Emitter Base Vol

 9.1. Size:158K  motorola
 mps911 mmbr911lt1.pdf pdf_icon

MPS918

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR911LT1/D The RF Line MMBR911LT1 NPN Silicon MPS911 High-Frequency Transistors Designed for low noise, wide dynamic range front end amplifiers and low noise VCO s. Available in a surface mountable plastic package, as well as IC = 60 mA the popular TO 226AA (TO 92) package. This Motorola series of small sig

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