MPS918 Specs and Replacement
Type Designator: MPS918
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 1.7 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO92
MPS918 Substitution
- BJT ⓘ Cross-Reference Search
MPS918 datasheet
MPS918, MPS3563 MPS918 is a Preferred Device Amplifier Transistors NPN Silicon Features Pb-Free Packages are Available* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector -Emitter Voltage VCEO Vdc MPS918 15 1 MPS3563 12 EMITTER Collector -Base Voltage VCBO Vdc MPS918 30 MPS3563 30 MARKING DIAGRAM Emitter -Base Voltage VEBO Vdc MPS9... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA MPS918/D Amplifier Transistors MPS918* NPN Silicon MPS3563 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol MPS918 MPS3563 Unit CASE 29 04, STYLE 1 Collector Emitter Voltage VCEO 15 12 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 30 30 Vdc Emitter Base Vol... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR911LT1/D The RF Line MMBR911LT1 NPN Silicon MPS911 High-Frequency Transistors Designed for low noise, wide dynamic range front end amplifiers and low noise VCO s. Available in a surface mountable plastic package, as well as IC = 60 mA the popular TO 226AA (TO 92) package. This Motorola series of small sig... See More ⇒
Detailed specifications: MPS8098, MPS8099, MPS834, MPS835, MPS8598, MPS8599, MPS901, MPS911, 2N3906, MPS918R, MPS929, MPS929A, MPS930, MPS930A, MPS930R, MPSA05, MPSA06
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