MPS918 Datasheet, Equivalent, Cross Reference Search
Type Designator: MPS918
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 1.7 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO92
MPS918 Transistor Equivalent Substitute - Cross-Reference Search
MPS918 Datasheet (PDF)
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MPS918, MPS3563MPS918 is a Preferred DeviceAmplifier TransistorsNPN SiliconFeatures Pb-Free Packages are Available* http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector -Emitter Voltage VCEO VdcMPS918 151MPS3563 12EMITTERCollector -Base Voltage VCBO VdcMPS918 30MPS3563 30MARKINGDIAGRAMEmitter -Base Voltage VEBO VdcMPS9
mps918re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAMPS918/DAmplifier TransistorsMPS918*NPN SiliconMPS3563*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER1MAXIMUM RATINGS23Rating Symbol MPS918 MPS3563 UnitCASE 2904, STYLE 1CollectorEmitter Voltage VCEO 15 12 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 30 30 VdcEmitterBase Vol
mps911 mmbr911lt1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR911LT1/DThe RF LineMMBR911LT1NPN SiliconMPS911High-Frequency TransistorsDesigned for low noise, wide dynamic range frontend amplifiers andlownoise VCOs. Available in a surfacemountable plastic package, as well asIC = 60 mAthe popular TO226AA (TO92) package. This Motorola series of smallsig
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