MPSA25 Todos los transistores

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA28/D Darlington Transistors MPSA28 NPN Silicon * MPSA29 COLLECTOR 3 *Motorola Preferred Device BASE 2 EMITTER 1 MAXIMUM RATINGS Rating Symbol MPSA28 MPSA29 Unit 1 2 Collector Emitter Voltage VCES 80 100 Vdc 3 Collector Base Voltage VCBO 80 100 Vdc CASE 29 04, STYLE 1 Emitter Base Voltage VEBO 12 Vdc T

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA27/D Darlington Transistor NPN Silicon MPSA27 COLLECTOR 3 BASE 2 1 2 3 EMITTER 1 CASE 29 04, STYLE 1 MAXIMUM RATINGS TO 92 (TO 226AA) Rating Symbol MPSA25 MPSA27 Unit Collector Emitter Voltage VCES 40 60 Vdc Emitter Base Voltage VEBO 10 Vdc Collector Current Continuous IC 500 mAdc Total Device Di

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA20/D Amplifier Transistor NPN Silicon MPSA20 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 40 Vdc Collector Base Voltage VCBO 4.0 Vdc Collector Current Continuous IC 100 mAdc Total Device Dissipati

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA26; MPSA27 NPN Darlington transistors 1999 Apr 27 Product specification Supersedes data of 1997 Apr 17 Philips Semiconductors Product specification NPN Darlington transistors MPSA26; MPSA27 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 60 V) 1 collector High DC current gain

Discrete POWER & Signal Technologies MPSA29 C TO-92 B E NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. See MPSA28 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 100 V V Colle

MPSA27/PZTA27 NPN General Purpose Amplifier 4 This device is designed for applications requiring extremely high current gain at collector currents to 500mA. 3 2 Sourced from process 03. 1 TO-92 SOT-223 See MPSA28 for characteristics. 1 1. Emitter 2. Base 3. Collector 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* TA=25 C unless otherwise noted Symbol Para

MPSA28 MMBTA28 PZTA28 C C E E C B TO-92 C B SuperSOT-3 B SOT-223 E Mark 3SS NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 80 V VCBO Colle

February 2009 MPSA20 NPN General Purpose Amplifier Features BVceo .....40V(Min) hFE ...... 40 400 @ Vce=10V, Ic=5mA Pb free Sourced from process 10 Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 4 V IC Collector Current 100 mA TJ Junction Temperature 150 C TSTG S

TM Central Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

MPSA28, MPSA29 MPSA29 is a Preferred Device Darlington Transistors NPN Silicon Features Pb--Free Packages are Available* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS BASE Rating Symbol Value Unit 2 Collector--Emitter Voltage MPSA28 VCES 80 Vdc MPSA29 100 Collector--Base Voltage MPSA28 VCBO 80 Vdc EMITTER 1 MPSA29 100 Emitter--Base Voltage VEBO 12 Vdc Collector Current --

MPSA28, MPSA29 MPSA29 is a Preferred Device Darlington Transistors NPN Silicon Features Pb--Free Packages are Available* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS BASE Rating Symbol Value Unit 2 Collector--Emitter Voltage MPSA28 VCES 80 Vdc MPSA29 100 Collector--Base Voltage MPSA28 VCBO 80 Vdc EMITTER 1 MPSA29 100 Emitter--Base Voltage VEBO 12 Vdc Collector Current --

MPSA20 Amplifier Transistor NPN Silicon Features Pb-Free Package is Available* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 2 Collector -Emitter Voltage VCEO 40 Vdc BASE Collector -Base Voltage VCBO 4.0 Vdc 1 Collector Current - Continuous IC 100 mAdc EMITTER Total Device Dissipation @ TA = 25 C PD 625 mW Derate above 25 C 5.0 mW/ C Total Devic

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS MPSA28 / MPSA29 TO-92 Plastic Package C B E ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL MPSA29 UNITS MPSA28 Collector Emitter Voltage VCES 80 100 V Collector Base Voltage VCBO 80 100 V Emitter Base Voltage VEBO 12 V Collector Current Contin

SEMICONDUCTOR MPSA27 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES Complementary to MPSA77. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATINGS (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO Collector-Base Voltage 60 V K 0.55 MAX F F L 2.30 VCES M 0.45 M