MPSA25 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA28/DDarlington TransistorsMPSA28NPN Silicon*MPSA29COLLECTOR 3*Motorola Preferred DeviceBASE2EMITTER 1MAXIMUM RATINGSRating Symbol MPSA28 MPSA29 Unit12CollectorEmitter Voltage VCES 80 100 Vdc 3CollectorBase Voltage VCBO 80 100 VdcCASE 2904, STYLE 1EmitterBase Voltage VEBO 12 VdcT

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA27/DDarlington TransistorNPN SiliconMPSA27COLLECTOR 3BASE2123EMITTER 1CASE 2904, STYLE 1MAXIMUM RATINGSTO92 (TO226AA)Rating Symbol MPSA25 MPSA27 UnitCollectorEmitter Voltage VCES 40 60 VdcEmitterBase Voltage VEBO 10 VdcCollector Current Continuous IC 500 mAdcTotal Device Di

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA20/DAmplifier TransistorNPN SiliconMPSA20COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 40 VdcCollectorBase Voltage VCBO 4.0 VdcCollector Current Continuous IC 100 mAdcTotal Device Dissipati

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186MPSA26; MPSA27NPN Darlington transistors1999 Apr 27Product specificationSupersedes data of 1997 Apr 17Philips Semiconductors Product specificationNPN Darlington transistors MPSA26; MPSA27FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 60 V)1 collector High DC current gain

Discrete POWER & SignalTechnologiesMPSA29C TO-92BENPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 500 mA. Sourcedfrom Process 03. See MPSA28 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 100 VV Colle

MPSA27/PZTA27NPN General Purpose Amplifier4 This device is designed for applications requiring extremely high current gain at collector currents to 500mA. 32 Sourced from process 03.1TO-92 SOT-223 See MPSA28 for characteristics.11. Emitter 2. Base 3. Collector 1. Base 2. Collector 3. EmitterAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Para

MPSA28 MMBTA28 PZTA28CCEECBTO-92CBSuperSOT-3BSOT-223EMark: 3SSNPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 500 mA. Sourcedfrom Process 03.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 80 VVCBO Colle

February 2009MPSA20NPN General Purpose AmplifierFeatures BVceo .....40V(Min) hFE ...... 40~400 @ Vce=10V, Ic=5mA Pb free Sourced from process 10Absolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitVCEO Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 4 VIC Collector Current 100 mATJ Junction Temperature 150 CTSTG S

TMCentralSemiconductor Corp.145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

MPSA28, MPSA29MPSA29 is a Preferred DeviceDarlington TransistorsNPN SiliconFeatures Pb--Free Packages are Available*http://onsemi.comCOLLECTOR 3MAXIMUM RATINGSBASERating Symbol Value Unit2Collector--Emitter Voltage MPSA28 VCES 80 VdcMPSA29 100Collector--Base Voltage MPSA28 VCBO 80 VdcEMITTER 1MPSA29 100Emitter--Base Voltage VEBO 12 VdcCollector Current --

MPSA28, MPSA29MPSA29 is a Preferred DeviceDarlington TransistorsNPN SiliconFeatures Pb--Free Packages are Available*http://onsemi.comCOLLECTOR 3MAXIMUM RATINGSBASERating Symbol Value Unit2Collector--Emitter Voltage MPSA28 VCES 80 VdcMPSA29 100Collector--Base Voltage MPSA28 VCBO 80 VdcEMITTER 1MPSA29 100Emitter--Base Voltage VEBO 12 VdcCollector Current --

MPSA20Amplifier TransistorNPN SiliconFeatures Pb-Free Package is Available*http://onsemi.comCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit2Collector -Emitter Voltage VCEO 40 Vdc BASECollector -Base Voltage VCBO 4.0 Vdc1Collector Current - Continuous IC 100 mAdcEMITTERTotal Device Dissipation @ TA = 25C PD 625 mWDerate above 25C 5.0 mW/CTotal Devic

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS MPSA28 / MPSA29TO-92Plastic PackageCBEABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL MPSA29 UNITSMPSA28Collector Emitter Voltage VCES 80 100 VCollector Base Voltage VCBO 80 100 VEmitter Base Voltage VEBO 12 VCollector Current Contin

SEMICONDUCTOR MPSA27TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORDARLINGTON TRANSISTORB CFEATURESComplementary to MPSA77.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATINGS (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_HJ 14.00 + 0.50VCBOCollector-Base Voltage 60 VK 0.55 MAXF FL 2.30VCES M 0.45 M