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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 MPSA42; MPSA43 NPN high-voltage transistors Product data sheet 2004 Oct 11 Supersedes data of 1999 Apr 12 NXP Semiconductors Product data sheet NPN high-voltage transistors MPSA42; MPSA43 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 collector 2 base APPLICATIONS 3 em

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA42; MPSA43 NPN high-voltage transistors 1999 Apr 12 Product specification Supersedes data of 1997 Sep 04 Philips Semiconductors Product specification NPN high-voltage transistors MPSA42; MPSA43 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 collector 2 base APPLICATION

October 2009 MPSA42 / MMBTA42 / PZTA42 NPN High Voltage Amplifier Features This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. MPSA42 MMBTA42 PZTA42 C C E E C B B SOT-23 TO-92 SOT-223 Mark 1D E B C Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Valu

MPSA42 MMBTA42 PZTA42 C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 300 V VCBO Collect

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MPSA42 MCC Micro Commercial Components TM THRU 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 MPSA43 Fax (818) 701-4939 Features NPN Silicon High Through Hole Package 150oC Junction Temperature Voltage Transistor Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 625mW Lead Free Finish/RoHS Compliant

MPSA42, MPSA43 High Voltage Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc 1 MPSA43 200 EMITTER MPSA42 300 Collector-Base Voltage VCBO Vdc MPSA43 200 MPSA42 300 Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 500 mAdc TO

UTC MPSA42/43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MPSA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES *Collector-Emitter voltage 1 VCEO=300V(UTC MPSA42) VCEO=200V(UTC MPSA43) *High current gain *Complement to UTC MPSA92/93 TO-92 *Collector Dissipation Pc(max)=625mW 1 EMITTER 2 BASE

MPSA42 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Voltage NPN Transistor G H Emitter J Millimeter REF. A D Min. Max. A 4.40 4.70 B B 4.30 4.70 C 12.70 - Base K D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. Collector

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTORS MPSA 42 MPSA 43 TO-92 CBE C B E High Voltage Transistors. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL MPSA42 MPSA43 UNIT Collector -Emitter Voltage VCEO 300 200 V Collector -Base Voltage VCBO 300 200 V Emitter -B

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors MPSA42 TRANSISTOR (NPN)FEATURES TO-92 High voltage 1. EMITTER 2. BASE 3. COLLECTOR Equivalent Circuit A42=Device code Solid dot=Green molding compound device, A42 Z if none,the normal device Z=Rank of hFE XXX=Code 1 ORDERING INFORMATION Part Number Package Pack

SEMICONDUCTOR MPSA42/43 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. B C FEATURES Complementary to MPSA92/93. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 MPSA42 300 H 0.45 Collector-Base _ VCBO H V J 14.00 + 0.50 Volta

MPSA42 General Purpose Transistors NPN Silicon TO-92 1 1. EMITTER 2 3 2. BASE 3. COLLECTOR MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 310 V Collector-Emitter Voltage VCEO 305 V Emitter-Base Voltage VEBO 5 V IC Collector Current -Continuous 500 mA Junction and Storage Temperature TJ, Tstg -55-150 Thermal R

MPSA42 / 43 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. complementary type the PNP transistor MPSA 92 and MPSA 93 is recommended. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage MPSA42 300 VCBO V MPSA43 200 Collector Emitter

SEMICONDUCTOR MPSA42 TECHNICAL DATA MPSA42 TRANSISTOR (NPN) B C FEATURES High voltage DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 MAXIMUM RATINGS (Ta=25 unless otherwise noted) F 1.27 G 0.85 H 0.45 Symbol Parameter Value Unit _ H J 14.00 0.50 + L 2.30 F F VCBO Collector-Base Voltage 300 V M 0.51 MAX VCEO Collector-Emitter Voltage 3

Certificate TH97/10561QM Certificate TW00/17276EM MPSA42 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. complementary type the PNP transistor MPSA 92 1. Emitter 2. Base 3. Collector and MPSA 93 is recommended. TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO

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Spec. No. HE6333 HI-SINCERITY Issued Date 1992.11.18 Revised Date 2004.07.21 MICROELECTRONICS CORP. Page No. 1/4 HMPSA42 NPN EPITACIAL PLANAR TRANSISTOR Description The HMPSA42 is high voltage transistor. Features TO-92 High Collector-Emitter Breakdown Voltage Low Collector-Emitter Saturation Voltage For Complementary Use with PNP Type HMPSA92 Absolute Maximum

DC COMPONENTS CO., LTD. MPSA42M DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use as a video output to drive color CRT, or as a dialer circuit in electronic telephone. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2oTyp 2 = Base .190(4.83) 3 = Collector .170(4.33) 2oTyp .500 Min (12.70) Absolute Maximum Rati

MPSA42-BK MPSA42-BK High voltage Si-epitaxial planar transistors NPN NPN Hochspannungs-Si-Epitaxial Planar-Transistoren Version 2011-07-07 Power dissipation 625 mW 0.1 Verlustleistung 4.6 Plastic case TO-92 Kunststoffgeh use (10D3) Weight approx. 0.18 g Gewicht ca. E B C Plastic material has UL classification 94V-0 Geh usematerial UL94V-0 klassifiziert Special packaging bul