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MPSA65 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MPSA65
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.625 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 8 V
   Corriente del colector DC máxima (Ic): 0.3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 5 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO92

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MPSA65 Datasheet (PDF)

 ..1. Size:29K  fairchild semi
mpsa65.pdf

MPSA65 MPSA65

Discrete POWER & SignalTechnologiesMPSA65 MMBTA65 PZTA65CCEECBTO-92CBSOT-23BSOT-223EMark: 2WPNP Darlington TransistorThis device is designed for applications requiring extremely highcurrent gain at currents to 800 mA. Sourced from Process 61.See MPSA64 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Valu

 9.1. Size:157K  motorola
mpsa62 mpsa63 mpsa64.pdf

MPSA65 MPSA65

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA62/DDarlington TransistorsMPSA62PNP Siliconthru*MPSA64COLLECTOR 3MPSA55, MPSA56BASEFor Specifications,2See MPSA05, MPSA06 Data*Motorola Preferred DeviceEMITTER 1MAXIMUM RATINGSMPSA63Rating Symbol MPSA62 MPSA64 UnitCollectorEmitter Voltage VCES 20 30 VdcCollectorBase Voltage VCBO

 9.2. Size:49K  philips
mpsa64 4.pdf

MPSA65 MPSA65

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186MPSA64PNP Darlington transistor1999 Apr 27Product specificationSupersedes data of 1997 Apr 23Philips Semiconductors Product specificationPNP Darlington transistor MPSA64FEATURES PINNING Low current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 30 V)1 collector High DC current gain (min. 10000).2 ba

 9.3. Size:127K  fairchild semi
mpsa64 mmbta64 pzta64.pdf

MPSA65 MPSA65

November 2011MPSA64 / MMBTA64 / PZTA64PNP Darlington TransistorFeatures This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61.MPSA64 MMBTA64 PZTA64CCEECBTO-92 SOT-23 SOT-223BMark:2VEBCAbsolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Value UnitsVCES Coll

 9.4. Size:208K  mcc
mpsa63 mpsa64 to-92.pdf

MPSA65 MPSA65

MCCMPSA63Micro Commercial ComponentsTM20736 Marilla Street ChatsworthMPSA64Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Capable of 1.5Watts of Power Dissipation PNP Darlington Collector Current 500mATransistor Operating Junction Temperature Range: -55 to +150 Lead Free Finish/RoHS Compliant ("P" Suffix desi

 9.5. Size:495K  kec
mpsa62 mpsa63 mpsa64.pdf

MPSA65 MPSA65

SEMICONDUCTOR MPSA62/63/64TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR.B CFEATURESComplementary to MPSA13/14.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXMAXIMUM RATING (Ta=25) DD 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85MPSA62 -20Collector-BaseH 0.45VCBOV_HJ 14.00 +

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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