MPSA65
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MPSA65
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 30
V
Tensión emisor-base (Veb): 8
V
Corriente del colector DC máxima (Ic): 0.3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Capacitancia de salida (Cc): 5
pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar MPSA65
MPSA65
Datasheet (PDF)
..1. Size:29K fairchild semi
mpsa65.pdf
Discrete POWER & SignalTechnologiesMPSA65 MMBTA65 PZTA65CCEECBTO-92CBSOT-23BSOT-223EMark: 2WPNP Darlington TransistorThis device is designed for applications requiring extremely highcurrent gain at currents to 800 mA. Sourced from Process 61.See MPSA64 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Valu
0.1. Size:1867K cn marching-power
mpsa65m390 mpsp65m390 mpsu65m390 mpsd65m390 mpsy65m390.pdf
MPSA65M390,MPSP65M390,MPSU65M390,MPSD65M390, MPSY65M390 FEATURES APPLICATIONS BVDSS=650V, ID=11A Switch Mode Power Supply (SMPS)RDS(on):0.39(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantTO-220 TO-252TO-220FTO-251 DFN 8*8Device Marking and Package Inform
0.2. Size:1404K cn marching-power
mpsa65m810 mpsp65m810 mpsu65m810 mpsd65m810.pdf
MPSA65M810,MPSP65M810,MPSU65M810,MPSD65M810 FEATURES APPLICATIONS BVDSS=650V, ID=6A Switch Mode Power Supply (SMPS)RDS(on):0.81(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantTO-252TO-220TO-220F TO-251Device Marking and Package InformationOrdering code
0.3. Size:1903K cn marching-power
mpsa65m650 mpsp65m650 mpsu65m650 mpsd65m650 mpsy65m650.pdf
MPSA65M650,MPSP65M650,MPSU65M650,MPSD65M650,MPSY65M650 FEATURES APPLICATIONS BVDSS=650V, ID=8A Switch Mode Power Supply (SMPS)RDS(on):0.65(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantTO-251 DFN 8*8TO-220FTO-220TO-252Device Marking and Package Informa
0.4. Size:2383K cn marching-power
mpsa65m280cfd.pdf
MPSA65M280CFD650V Super-Junction Power MOSFETFEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessGDS TO-220FAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Resonant switching stagesDevice Marking and Pack
0.5. Size:1658K cn marching-power
mpsa65m170 mpsp65m170 mpsh65m170 mpsc65m170 mpsw65m170 mpsy65m170.pdf
MPSA65M170,MPSP65M170,MPSC65M170,MPSH65M170,MPSW65M170,MPSY65M170FEATURES APPLICATIONS BVDSS=650V, ID=20A Switch Mode Power Supply (SMPS)RDS(on):0.17(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantDSSPin1 : GGPin2 : Driver SourceTO-247TO-220F TO-2
0.6. Size:1092K cn marching-power
mpsa65m830b.pdf
MPSA65M830B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650 V, ID =5.5 ARDS(on) @ :0.83 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedGD Built-in ESD Diode S TO-220FApplication Switch Mode Power Supply (SMPS) TV power & LED Lighting Power
0.7. Size:876K cn marching-power
mpsa65m640b.pdf
MPSA65M640B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650 V, ID=6.7 ARDS(on) @ :0.64 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Built-in ESD DiodeG DApplicationS TO-220F Switch Mode Power Supply (SMPS) Power Factor Correction (PFC
0.8. Size:1120K cn marching-power
mpsa65m165b.pdf
MPSA65M165B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650V, I D =20.4ARDS(on) @ :0.165 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD Diode DS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (
0.9. Size:1212K cn marching-power
mpsa65m1k0b.pdf
MPSA65M1K 0B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650 V, ID=4.8 ARDS(on) @ :1.0 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD DiodeDS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Suppl
0.10. Size:1152K cn marching-power
mpsa65m110b.pdf
MPSA65M110B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650V, I D=29.1ARDS(on) @ :0.11 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD DiodeDS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UP
0.11. Size:1118K cn marching-power
mpsa65m990 mpsp65m990 mpsu65m990 mpsd65m990.pdf
MPSA65M990,MPSP65M990,MPSU65M990,MPSD65M990 FEATURES APPLICATIONS BVDSS=650V, ID=4A Switch Mode Power Supply (SMPS)RDS(on):0.99(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantTO-252TO-220TO-220F TO-251Device Marking and Package InformationOrdering code
0.12. Size:1089K cn marching-power
mpsa65m380b.pdf
MPSA65M380B650V N Channel Super Junction MOSFETFeaturesBVDSS=650 V, ID =10.4 ARDS(on) @ :0.38 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD DiodeDS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Suppl
0.13. Size:2125K cn marching-power
mpsa65m180cfd.pdf
MPSA65M180CFD650V Super-Junction Power MOSFETFEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessGDS TO-220FAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Resonant switching stagesDevice Marking and Pack
0.14. Size:1107K cn marching-power
mpsa65m210b.pdf
MPSA65M210B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650V, I D=16.8ARDS(on) @ :0.21 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD DiodeDS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (U
0.15. Size:1651K cn marching-power
mpsa65m1k6.pdf
MPSA65M1K6Power MOSFET650V Super-Junction Power MOSFETJunction Power MOSFETFeaturesBVDSS=650 V, ID=3 ARDS(on) @ :1.6 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) 100% Avalanche Tested RoHS compliantGDS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device
0.16. Size:1783K cn marching-power
mpsa65m1k5.pdf
MPSA65M1K5Power MOSFET650V Super-Junction Power MOSFETJunction Power MOSFETFeaturesBVDSS=650 V, ID=3 ARDS(on) @ :1.5 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) 100% Avalanche Tested RoHS compliantGDS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device
0.17. Size:1117K cn marching-power
mpsa65m130b.pdf
MPSA65M130B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650V, I D=25ARDS(on) @ :0.13 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD Diode DS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS)
0.18. Size:2181K cn marching-power
mpsa65m260 mpsp65m260 mpsh65m260 mpsc65m260 mpsy65m260.pdf
MPSA65M260,MPSP65M260,MPSC65M260,MPSH65M260,MPSY65M260FEATURES APPLICATIONS BVDSS=650V, ID=15A Switch Mode Power Supply (SMPS)RDS(on):0.26(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantTO-220FTO-220 TO-262 TO-263DFN 8*8Device Marking and Package Informat
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