MPSA66 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MPSA66

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.625 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 8 V

Corriente del colector DC máxima (Ic): 0.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 5 pF

Ganancia de corriente contínua (hFE): 75

Encapsulados: TO92

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MPSA66 datasheet

 9.1. Size:157K  motorola
 mpsa62 mpsa63 mpsa64.pdf pdf_icon

MPSA66

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA62/D Darlington Transistors MPSA62 PNP Silicon thru * MPSA64 COLLECTOR 3 MPSA55, MPSA56 BASE For Specifications, 2 See MPSA05, MPSA06 Data *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS MPSA63 Rating Symbol MPSA62 MPSA64 Unit Collector Emitter Voltage VCES 20 30 Vdc Collector Base Voltage VCBO

 9.2. Size:49K  philips
 mpsa64 4.pdf pdf_icon

MPSA66

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA64 PNP Darlington transistor 1999 Apr 27 Product specification Supersedes data of 1997 Apr 23 Philips Semiconductors Product specification PNP Darlington transistor MPSA64 FEATURES PINNING Low current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 30 V) 1 collector High DC current gain (min. 10000). 2 ba

 9.3. Size:127K  fairchild semi
 mpsa64 mmbta64 pzta64.pdf pdf_icon

MPSA66

November 2011 MPSA64 / MMBTA64 / PZTA64 PNP Darlington Transistor Features This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. MPSA64 MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 SOT-223 B Mark 2V EBC Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCES Coll

 9.4. Size:29K  fairchild semi
 mpsa65.pdf pdf_icon

MPSA66

Discrete POWER & Signal Technologies MPSA65 MMBTA65 PZTA65 C C E E C B TO-92 C B SOT-23 B SOT-223 E Mark 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Valu

MOSTRAR MÁS

Otros transistores... MPSA44, MPSA45, MPSA55, MPSA56, MPSA62, MPSA63, MPSA64, MPSA65, C3198, MPSA70, MPSA75, MPSA76, MPSA77, MPSA92, MPSA93, MPSA94, MPSD01