All Transistors. MPSA66 Datasheet

 

MPSA66 Datasheet and Replacement


   Type Designator: MPSA66
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 5 pF
   Forward Current Transfer Ratio (hFE), MIN: 75
   Noise Figure, dB: -
   Package: TO92
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MPSA66 Datasheet (PDF)

 9.1. Size:157K  motorola
mpsa62 mpsa63 mpsa64.pdf pdf_icon

MPSA66

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA62/DDarlington TransistorsMPSA62PNP Siliconthru*MPSA64COLLECTOR 3MPSA55, MPSA56BASEFor Specifications,2See MPSA05, MPSA06 Data*Motorola Preferred DeviceEMITTER 1MAXIMUM RATINGSMPSA63Rating Symbol MPSA62 MPSA64 UnitCollectorEmitter Voltage VCES 20 30 VdcCollectorBase Voltage VCBO

 9.2. Size:49K  philips
mpsa64 4.pdf pdf_icon

MPSA66

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186MPSA64PNP Darlington transistor1999 Apr 27Product specificationSupersedes data of 1997 Apr 23Philips Semiconductors Product specificationPNP Darlington transistor MPSA64FEATURES PINNING Low current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 30 V)1 collector High DC current gain (min. 10000).2 ba

 9.3. Size:127K  fairchild semi
mpsa64 mmbta64 pzta64.pdf pdf_icon

MPSA66

November 2011MPSA64 / MMBTA64 / PZTA64PNP Darlington TransistorFeatures This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61.MPSA64 MMBTA64 PZTA64CCEECBTO-92 SOT-23 SOT-223BMark:2VEBCAbsolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Value UnitsVCES Coll

 9.4. Size:29K  fairchild semi
mpsa65.pdf pdf_icon

MPSA66

Discrete POWER & SignalTechnologiesMPSA65 MMBTA65 PZTA65CCEECBTO-92CBSOT-23BSOT-223EMark: 2WPNP Darlington TransistorThis device is designed for applications requiring extremely highcurrent gain at currents to 800 mA. Sourced from Process 61.See MPSA64 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Valu

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N477 | NA11EI | 3DG1473 | HN1C03F | NSBC113EF3 | MJ7161 | FTC3303

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