MPSA66 Datasheet. Specs and Replacement

Type Designator: MPSA66  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 5 pF

Forward Current Transfer Ratio (hFE), MIN: 75

Noise Figure, dB: -

Package: TO92

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MPSA66 datasheet

 9.1. Size:157K  motorola

mpsa62 mpsa63 mpsa64.pdf pdf_icon

MPSA66

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA62/D Darlington Transistors MPSA62 PNP Silicon thru * MPSA64 COLLECTOR 3 MPSA55, MPSA56 BASE For Specifications, 2 See MPSA05, MPSA06 Data *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS MPSA63 Rating Symbol MPSA62 MPSA64 Unit Collector Emitter Voltage VCES 20 30 Vdc Collector Base Voltage VCBO... See More ⇒

 9.2. Size:49K  philips

mpsa64 4.pdf pdf_icon

MPSA66

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA64 PNP Darlington transistor 1999 Apr 27 Product specification Supersedes data of 1997 Apr 23 Philips Semiconductors Product specification PNP Darlington transistor MPSA64 FEATURES PINNING Low current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 30 V) 1 collector High DC current gain (min. 10000). 2 ba... See More ⇒

 9.3. Size:127K  fairchild semi

mpsa64 mmbta64 pzta64.pdf pdf_icon

MPSA66

November 2011 MPSA64 / MMBTA64 / PZTA64 PNP Darlington Transistor Features This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. MPSA64 MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 SOT-223 B Mark 2V EBC Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCES Coll... See More ⇒

 9.4. Size:29K  fairchild semi

mpsa65.pdf pdf_icon

MPSA66

Discrete POWER & Signal Technologies MPSA65 MMBTA65 PZTA65 C C E E C B TO-92 C B SOT-23 B SOT-223 E Mark 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Valu... See More ⇒

Detailed specifications: MPSA44, MPSA45, MPSA55, MPSA56, MPSA62, MPSA63, MPSA64, MPSA65, C3198, MPSA70, MPSA75, MPSA76, MPSA77, MPSA92, MPSA93, MPSA94, MPSD01

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