MPSA77 Todos los transistores

 ..1. Size:131K  motorola
 mpsa75 mpsa77.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA75/D Darlington Transistors PNP Silicon MPSA75 MPSA77 COLLECTOR 3 BASE 2 EMITTER 1 1 MAXIMUM RATINGS 2 3 Rating Symbol MPSA75 MPSA77 Unit CASE 29 04, STYLE 1 Collector Emitter Voltage VCES 40 60 Vdc TO 92 (TO 226AA) Emitter Base Voltage VEBO 10 Vdc Collector Current Continuous IC 500

 ..2. Size:25K  fairchild semi
 mpsa77.pdf

MPSA77 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800mA. Sourced from process 61. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta=25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage -60 V VCBO Collector-Base Voltage -60 V VEBO Emitter-Base

 ..3. Size:66K  central
 mpsa75 mpsa76 mpsa77.pdf

DATA SHEET MPSA75 MPSA76 MPSA77 PNP DARLINGTON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPSA75 series are silicon PNP Darlington Transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain. MAXIMUM RATINGS (TA=25 C) SYMBOL MPSA75 MPSA76 MPSA77 UNITS Collector-Emitter Voltage VCES 40 50 60 V Collect

 ..4. Size:35K  kec
 mpsa77.pdf

SEMICONDUCTOR MPSA77 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES Complementary to MPSA27. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 MAXIMUM RATINGS (Ta=25 ) E 1.00 F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO -60 V Collector-Base Voltage K 0.55 MAX F F L 2.30 VCES Collect

 9.1. Size:427K  motorola
 mpsa70re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA70/D Amplifier Transistor PNP Silicon MPSA70 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29 04, STYLE 1 TO 92 (TO 226AA) MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc Emitter Base Voltage VEBO 4.0 Vdc Collector Current Continuous IC 100 mAdc Total Device Di

 9.2. Size:52K  central
 mpsa20 mpsa70.pdf

TM Central Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 9.3. Size:104K  onsemi
 mpsa70.pdf

MPSA70 Amplifier Transistor PNP Silicon Features Pb-Free Package is Available* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 2 Collector -Emitter Voltage VCEO -40 Vdc BASE Emitter -Base Voltage VEBO -4.0 Vdc 1 Collector Current - Continuous IC -100 mAdc EMITTER Total Device Dissipation @ TA = 25 C PD 625 mW Derate above 25 C 5.0 mW/ C Total Devi

 9.4. Size:1950K  cn marching-power
 mpsa70m290 mpsp70m290 mpsh70m290 mpsc70m290.pdf

MPSA70M290,MPSP70M290,MPSC70M290, MPSH70M290 FEATURES APPLICATIONS BVDSS=700V, ID=15A Switch Mode Power Supply (SMPS) RDS(on) 0.29 (Max)@VGS=10V Uninterruptible Power Supply (UPS) Very low FOM RDS(on) Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliant TO-262 TO-220F TO-263 TO-220 Device Marking and Package Information Ordering code

 9.5. Size:2484K  cn marching-power
 mpsa70m300cfd.pdf

MPSA70M300CFD 700V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdness G D S TO-220F APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Resonant switching stages Device Marking and Pack

 9.6. Size:2212K  cn marching-power
 mpsa70m200cfd.pdf

MPSA70M200CFD 700V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdness G D S TO-220F APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Resonant switching stages Device Marking and Pack