MPSA77 Datasheet and Replacement

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA75/DDarlington TransistorsPNP SiliconMPSA75MPSA77COLLECTOR 3BASE2EMITTER 11MAXIMUM RATINGS23Rating Symbol MPSA75 MPSA77 UnitCASE 2904, STYLE 1CollectorEmitter Voltage VCES 40 60 VdcTO92 (TO226AA)EmitterBase Voltage VEBO 10 VdcCollector Current Continuous IC 500

MPSA77PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800mA. Sourced from process 61.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings * Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage -60 VVCBO Collector-Base Voltage -60 VVEBO Emitter-Base

DATA SHEETMPSA75 MPSA76 MPSA77 PNP DARLINGTON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPSA75 series are silicon PNP Darlington Transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain. MAXIMUM RATINGS (TA=25C) SYMBOL MPSA75 MPSA76 MPSA77 UNITS Collector-Emitter Voltage VCES 40 50 60 V Collect

SEMICONDUCTOR MPSA77TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORDARLINGTON TRANSISTORB CFEATURESComplementary to MPSA27.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45MAXIMUM RATINGS (Ta=25 ) E 1.00F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_HJ 14.00 + 0.50VCBO -60 VCollector-Base VoltageK 0.55 MAXF FL 2.30VCESCollect

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA70/DAmplifier TransistorPNP SiliconMPSA70COLLECTOR32BASE1EMITTER123CASE 2904, STYLE 1TO92 (TO226AA)MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcEmitterBase Voltage VEBO 4.0 VdcCollector Current Continuous IC 100 mAdcTotal Device Di

TMCentralSemiconductor Corp.145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

MPSA70Amplifier TransistorPNP SiliconFeatures Pb-Free Package is Available*http://onsemi.comCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit2Collector -Emitter Voltage VCEO -40 Vdc BASEEmitter -Base Voltage VEBO -4.0 Vdc1Collector Current - Continuous IC -100 mAdcEMITTERTotal Device Dissipation @ TA = 25C PD 625 mWDerate above 25C 5.0 mW/CTotal Devi

MPSA70M290,MPSP70M290,MPSC70M290,MPSH70M290FEATURES APPLICATIONS BVDSS=700V, ID=15A Switch Mode Power Supply (SMPS)RDS(on):0.29(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantTO-262TO-220F TO-263TO-220Device Marking and Package InformationOrdering code

MPSA70M300CFD700V Super-Junction Power MOSFETFEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessGDS TO-220FAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Resonant switching stagesDevice Marking and Pack

MPSA70M200CFD700V Super-Junction Power MOSFETFEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessGDS TO-220FAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Resonant switching stagesDevice Marking and Pack