MPSH17 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSH17/DCATV TransistorNPN SiliconMPSH17COLLECTOR3Motorola Preferred Device1BASE2EMITTER1MAXIMUM RATINGS23Rating Symbol Value UnitCASE 2904, STYLE 2CollectorEmitter Voltage VCEO 15 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 20 VdcEmitterBase Voltage VEBO 3.0 VdcTotal Devi

MPSH17Preferred Device CATV TransistorNPN SiliconFeatures Pb-Free Package is Available*http://onsemi.comCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1BASECollector -Emitter Voltage VCEO 15 VdcCollector -Base Voltage VCBO 20 Vdc2Emitter -Base Voltage VEBO 3.0 VdcEMITTERTotal Device Dissipation @ TA = 25C PD 350 mWDerate above 25C 2.81 mW/CMARK

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSH10/DVHF/UHF TransistorsMPSH10NPN SiliconMPSH11COLLECTOR3Motorola Preferred Devices1BASE2EMITTER1MAXIMUM RATINGS23Rating Symbol Value UnitCASE 2904, STYLE 2CollectorEmitter Voltage VCEO 25 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 3.0 Vd

MPSH10 MMBTH10CEC TO-92EBBSOT-23Mark: 3ENPN RF TransistorThis device is designed for use in low noise UHF/VHF amplifiers,with collector currents in the 100 A to 20 mA range in commonemitter or common base mode of operations, and in low frequencydrift, high output UHF oscillators. Sourced from Process 42.Absolute Maximum Ratings* TA = 25C unless otherwise notedS

MPSH11 MMBTH11CETO-92CEBBSOT-23Mark: 3GNPN RF TransistorThis device is designed for common-emitter low noise amplifierand mixer applications with collector currents in the 100 A to10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels fordriving FET mixers. Sourced from Process 47.Absolute Maximum Ratings

NPN SILICON PLANAR0P MPSH10PRF TRANSISTORISSUE 4 FEB 94 T i i T i i I TI I i i i Ii i T I E-Line i I I TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C) T I IT DITI II V V I I V I II i V V I I V I i V V I I

NPN SILICON PLANARMPSH10RF TRANSISTORISSUE 3 NOVEMBER 94 T i T i i i T TO92ABSOLUTE MAXIMUM RATINGS. T V IT II i V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C) T I T IT DITI II V V I I V I II i V V I I V I i V V I I V I II I V V I i I V V I II i V V I I i

MPSH10Preferred Device VHF/UHF TransistorsNPN SiliconFeatures Pb-Free Packages are Available* http://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value Unit1Collector-Emitter Voltage VCEO 25 VdcBASECollector-Base Voltage VCBO 30 VdcEmitter-Base Voltage VEBO 3.0 Vdc2EMITTERTotal Device Dissipation @ TA = 25C PD 350 WDerate above 25C 2.8 mW/CTota

MPSH10Preferred Device VHF/UHF TransistorsNPN SiliconFeatures Pb-Free Packages are Available* http://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value Unit1Collector-Emitter Voltage VCEO 25 VdcBASECollector-Base Voltage VCBO 30 VdcEmitter-Base Voltage VEBO 3.0 Vdc2EMITTERTotal Device Dissipation @ TA = 25C PD 350 WDerate above 25C 2.8 mW/CTota

MPSH10Preferred Device VHF/UHF TransistorsNPN SiliconFeatures Pb-Free Packages are Available* http://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value Unit1Collector-Emitter Voltage VCEO 25 VdcBASECollector-Base Voltage VCBO 30 VdcEmitter-Base Voltage VEBO 3.0 Vdc2EMITTERTotal Device Dissipation @ TA = 25C PD 350 WDerate above 25C 2.8 mW/CTota

UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3MPSH10-x-T92-B MPSH10L-x-T92-B MPSH10G-x-T92-B TO-92 E B

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR MPSH10TO-92Plastic PackageCEBVHF/UHF TransistorABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 25 VVCBOCollector Base Voltage 30 VVEBOEmitter Base Voltage 3.0 VP

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) 1.BASE General Purpose Amplifier2 EMITTER 3.COLLECTOR In Low Noise UHF/VHF Amplifiers In Low Frequency Drift, High Output UHF Oscillators Equivalent Circuit MPS