Справочник транзисторов. MPSH17

 

Биполярный транзистор MPSH17 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MPSH17
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.625 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
   Макcимальный постоянный ток коллектора (Ic): 0.01 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 800 MHz
   Ёмкость коллекторного перехода (Cc): 0.9 pf
   Статический коэффициент передачи тока (hfe): 25
   Корпус транзистора: TO92

 Аналоги (замена) для MPSH17

 

 

MPSH17 Datasheet (PDF)

 0.1. Size:76K  motorola
mpsh17re.pdf

MPSH17
MPSH17

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSH17/DCATV TransistorNPN SiliconMPSH17COLLECTOR3Motorola Preferred Device1BASE2EMITTER1MAXIMUM RATINGS23Rating Symbol Value UnitCASE 2904, STYLE 2CollectorEmitter Voltage VCEO 15 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 20 VdcEmitterBase Voltage VEBO 3.0 VdcTotal Devi

 0.2. Size:42K  onsemi
mpsh17-d.pdf

MPSH17
MPSH17

MPSH17Preferred Device CATV TransistorNPN SiliconFeatures Pb-Free Package is Available*http://onsemi.comCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1BASECollector -Emitter Voltage VCEO 15 VdcCollector -Base Voltage VCBO 20 Vdc2Emitter -Base Voltage VEBO 3.0 VdcEMITTERTotal Device Dissipation @ TA = 25C PD 350 mWDerate above 25C 2.81 mW/CMARK

 9.1. Size:78K  motorola
mpsh10 mpsh11.pdf

MPSH17
MPSH17

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSH10/DVHF/UHF TransistorsMPSH10NPN SiliconMPSH11COLLECTOR3Motorola Preferred Devices1BASE2EMITTER1MAXIMUM RATINGS23Rating Symbol Value UnitCASE 2904, STYLE 2CollectorEmitter Voltage VCEO 25 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 3.0 Vd

 9.2. Size:738K  fairchild semi
mmbth10 mpsh10.pdf

MPSH17
MPSH17

MPSH10 MMBTH10CEC TO-92EBBSOT-23Mark: 3ENPN RF TransistorThis device is designed for use in low noise UHF/VHF amplifiers,with collector currents in the 100 A to 20 mA range in commonemitter or common base mode of operations, and in low frequencydrift, high output UHF oscillators. Sourced from Process 42.Absolute Maximum Ratings* TA = 25C unless otherwise notedS

 9.3. Size:123K  fairchild semi
mpsh11 mmbth11.pdf

MPSH17
MPSH17

MPSH11 MMBTH11CETO-92CEBBSOT-23Mark: 3GNPN RF TransistorThis device is designed for common-emitter low noise amplifierand mixer applications with collector currents in the 100 A to10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels fordriving FET mixers. Sourced from Process 47.Absolute Maximum Ratings

 9.4. Size:47K  diodes
mpsh10p.pdf

MPSH17
MPSH17

NPN SILICON PLANAR0P MPSH10PRF TRANSISTORISSUE 4 FEB 94 T i i T i i I TI I i i i Ii i T I E-Line i I I TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C) T I IT DITI II V V I I V I II i V V I I V I i V V I I

 9.5. Size:22K  diodes
mpsh10.pdf

MPSH17

NPN SILICON PLANARMPSH10RF TRANSISTORISSUE 3 NOVEMBER 94 T i T i i i T TO92ABSOLUTE MAXIMUM RATINGS. T V IT II i V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C) T I T IT DITI II V V I I V I II i V V I I V I i V V I I V I II I V V I i I V V I II i V V I I i

 9.6. Size:82K  onsemi
mpsh10g.pdf

MPSH17
MPSH17

MPSH10Preferred Device VHF/UHF TransistorsNPN SiliconFeatures Pb-Free Packages are Available* http://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value Unit1Collector-Emitter Voltage VCEO 25 VdcBASECollector-Base Voltage VCBO 30 VdcEmitter-Base Voltage VEBO 3.0 Vdc2EMITTERTotal Device Dissipation @ TA = 25C PD 350 WDerate above 25C 2.8 mW/CTota

 9.7. Size:82K  onsemi
mpsh10rlrpg.pdf

MPSH17
MPSH17

MPSH10Preferred Device VHF/UHF TransistorsNPN SiliconFeatures Pb-Free Packages are Available* http://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value Unit1Collector-Emitter Voltage VCEO 25 VdcBASECollector-Base Voltage VCBO 30 VdcEmitter-Base Voltage VEBO 3.0 Vdc2EMITTERTotal Device Dissipation @ TA = 25C PD 350 WDerate above 25C 2.8 mW/CTota

 9.8. Size:82K  onsemi
mpsh10.pdf

MPSH17
MPSH17

MPSH10Preferred Device VHF/UHF TransistorsNPN SiliconFeatures Pb-Free Packages are Available* http://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value Unit1Collector-Emitter Voltage VCEO 25 VdcBASECollector-Base Voltage VCBO 30 VdcEmitter-Base Voltage VEBO 3.0 Vdc2EMITTERTotal Device Dissipation @ TA = 25C PD 350 WDerate above 25C 2.8 mW/CTota

 9.9. Size:130K  utc
mpsh10.pdf

MPSH17
MPSH17

UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3MPSH10-x-T92-B MPSH10L-x-T92-B MPSH10G-x-T92-B TO-92 E B

 9.10. Size:33K  no
mpsh19 mpsh20 mpsh30 mpsh31 mpsh32 mpsh37.pdf

MPSH17

Downloaded from DatasheetLib.com - datasheet search engine

 9.11. Size:261K  cdil
mpsh10.pdf

MPSH17
MPSH17

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR MPSH10TO-92Plastic PackageCEBVHF/UHF TransistorABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 25 VVCBOCollector Base Voltage 30 VVEBOEmitter Base Voltage 3.0 VP

 9.12. Size:357K  jiangsu
mpsh10.pdf

MPSH17
MPSH17

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) 1.BASE General Purpose Amplifier2 EMITTER 3.COLLECTOR In Low Noise UHF/VHF Amplifiers In Low Frequency Drift, High Output UHF Oscillators Equivalent Circuit MPS

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