MPSH17 - описание и поиск аналогов

 0.1. Size:76K  motorola
 mpsh17re.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSH17/D CATV Transistor NPN Silicon MPSH17 COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol Value Unit CASE 29 04, STYLE 2 Collector Emitter Voltage VCEO 15 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 20 Vdc Emitter Base Voltage VEBO 3.0 Vdc Total Devi

 0.2. Size:42K  onsemi
 mpsh17-d.pdf 

MPSH17 Preferred Device CATV Transistor NPN Silicon Features Pb-Free Package is Available* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector -Emitter Voltage VCEO 15 Vdc Collector -Base Voltage VCBO 20 Vdc 2 Emitter -Base Voltage VEBO 3.0 Vdc EMITTER Total Device Dissipation @ TA = 25 C PD 350 mW Derate above 25 C 2.81 mW/ C MARK

 9.1. Size:78K  motorola
 mpsh10 mpsh11.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSH10/D VHF/UHF Transistors MPSH10 NPN Silicon MPSH11 COLLECTOR 3 Motorola Preferred Devices 1 BASE 2 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol Value Unit CASE 29 04, STYLE 2 Collector Emitter Voltage VCEO 25 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 3.0 Vd

 9.2. Size:738K  fairchild semi
 mmbth10 mpsh10.pdf 

MPSH10 MMBTH10 C E C TO-92 E B B SOT-23 Mark 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42. Absolute Maximum Ratings* TA = 25 C unless otherwise noted S

 9.3. Size:123K  fairchild semi
 mpsh11 mmbth11.pdf 

MPSH11 MMBTH11 C E TO-92 C E B B SOT-23 Mark 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 A to 10 mA range to 300 MHz, and low frequency drift common- base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47. Absolute Maximum Ratings

 9.4. Size:47K  diodes
 mpsh10p.pdf 

NPN SILICON PLANAR 0P MPSH10P RF TRANSISTOR ISSUE 4 FEB 94 T i i T i i I TI I i i i Ii i T I E-Line i I I TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C) T I IT DITI II V V I I V I II i V V I I V I i V V I I

 9.5. Size:22K  diodes
 mpsh10.pdf 

NPN SILICON PLANAR MPSH10 RF TRANSISTOR ISSUE 3 NOVEMBER 94 T i T i i i T TO92 ABSOLUTE MAXIMUM RATINGS. T V IT II i V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C) T I T IT DITI II V V I I V I II i V V I I V I i V V I I V I II I V V I i I V V I II i V V I I i

 9.6. Size:82K  onsemi
 mpsh10g.pdf 

MPSH10 Preferred Device VHF/UHF Transistors NPN Silicon Features Pb-Free Packages are Available* http //onsemi.com COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO 25 Vdc BASE Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc 2 EMITTER Total Device Dissipation @ TA = 25 C PD 350 W Derate above 25 C 2.8 mW/ C Tota

 9.7. Size:82K  onsemi
 mpsh10rlrpg.pdf 

MPSH10 Preferred Device VHF/UHF Transistors NPN Silicon Features Pb-Free Packages are Available* http //onsemi.com COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO 25 Vdc BASE Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc 2 EMITTER Total Device Dissipation @ TA = 25 C PD 350 W Derate above 25 C 2.8 mW/ C Tota

 9.8. Size:82K  onsemi
 mpsh10.pdf 

MPSH10 Preferred Device VHF/UHF Transistors NPN Silicon Features Pb-Free Packages are Available* http //onsemi.com COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO 25 Vdc BASE Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc 2 EMITTER Total Device Dissipation @ TA = 25 C PD 350 W Derate above 25 C 2.8 mW/ C Tota

 9.9. Size:130K  utc
 mpsh10.pdf 

UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3 MPSH10-x-T92-B MPSH10L-x-T92-B MPSH10G-x-T92-B TO-92 E B

 9.10. Size:33K  no
 mpsh19 mpsh20 mpsh30 mpsh31 mpsh32 mpsh37.pdf 

Downloaded from DatasheetLib.com - datasheet search engine

 9.11. Size:261K  cdil
 mpsh10.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR MPSH10 TO-92 Plastic Package C E B VHF/UHF Transistor ABSOLUTE MAXIMUM RATINGS(Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 25 V VCBO Collector Base Voltage 30 V VEBO Emitter Base Voltage 3.0 V P

 9.12. Size:357K  jiangsu
 mpsh10.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) 1.BASE General Purpose Amplifier 2 EMITTER 3.COLLECTOR In Low Noise UHF/VHF Amplifiers In Low Frequency Drift, High Output UHF Oscillators Equivalent Circuit MPS